International Rectifier IRF7413A Datasheet
PD - 9.1613A
PRELIMINARY
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
S
S
S
2
3
4
Top View
IRF7413A
HEXFET® Power MOSFET
A
A
81
D
7
D
6
D
5
DG
SO-8
R
DS(on)
V
= 30V
DSS
= 0.0135Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12
@ TA = 70°C Continuous Drain Current, VGS @ 10V 8.4
I
D
I
DM
= 25°C Power Dissipation 2.5
P
D @TA
V
GS
E
AS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J, TSTG
Pulsed Drain Current 58
Linear Derating Factor 0.02 mW/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 260 mJ
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance Ratings
Parameter Typ. Max. Units
R
Maximum Junction-to-Ambient ––– 50
θJA
A
W
°C/W
8/25/97
IRF7413A
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Gate-to-Source Reverse Leakage ––– –– – 100 VGS = 20V
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient – –– 0.034 –– – V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.0135 VGS = 10V, ID = 6.6A
––– ––– 0.020 VGS = 4.5V, ID = 3.3A
Ω
Gate Threshold Voltage 1.0 –– – ––– V VDS = VGS, ID = 250µA
Forward Transconductance 10 ––– ––– S VDS = 10V, ID = 3.7A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– –– – -100 VGS = -20V
––– ––– 1.0 VDS = 24V, VGS = 0V
––– ––– 25 VDS = 24V, VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge ––– 52 79 ID = 7.3A
Gate-to-Source Charge ––– 6.1 9.2 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– 16 23 VGS = 10 V, See Fig. 6 and 9
Turn-On Delay Time ––– 8.6 ––– VDD = 15V
Rise Time ––– 50 ––– ID = 7.3A
Turn-Off Delay Time ––– 52 ––– RG = 6.2Ω
ns
Fall Time ––– 46 ––– RD = 2.0Ω, See Fig. 10
Input Capacitance ––– 1800 ––– VGS = 0V
Output Capacitance ––– 680 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 24 0 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 150°C
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 3.1
––– ––– 58
Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 6.6A, VGS = 0V
Reverse Recovery Time ––– 74 110 ns TJ = 25°C, IF = 7.3A
Reverse RecoveryCharge ––– 200 300 nC di/dt = 100A/µs
= 25°C, L =9.8mH
J
=7.3A. (See Figure 12)
AS
≤ 7.3A, di/dt ≤ 100A/µs, V
DD
≤ V
(BR)DSS
,
A
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Use IRF7413 data and test conditions
Surface mounted on FR-4 board, t ≤ 10sec.
D
G
S
IRF7413A
100
10
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOT TO M 3. 0V
100
10
3.0V
3.0V
D
I , Drain-to-Source Cu rrent (A)
20µs PULSE WIDT H
T = 25 °C
1
0.1 1 10
V , Drain-to-Source Voltage (V)
DS
J
A
D
I , Drain-to-Source Current (A)
20µs PULSE WIDT H
T = 150°C
1
0.1 1 10
V , Drain-to -Sou rce Vo ltage ( V)
DS
J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
100
2.0
I = 7.3 A
D
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
A
T = 150°C
J
T = 25°C
J
10
D
I , Dra in -to -So u rce Cu rrent (A)
1
3.0 3.5 4.0 4.5
V , Ga te-to-So urce Voltage (V)
GS
V = 10 V
DS
20µs PULSE W IDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(No rm alized)
0.5
DS(on)
R , Dra in-to -S ourc e O n R e sista n ce
A
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Ju nc tio n T em perat u re ( °C )
J
V = 1 0V
GS
A
Fig 4. Normalized On-Resistance
Vs. Temperature
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