International Rectifier IRF7413 Datasheet
SMPS MOSFET
PD- 91330F
IRF7413
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
to Simplify Design, (See
OSS
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
V
DSS
30V 11@VGS = 10V 12A
1
S
2
S
3
S
4
Top View
R
DS(on)
8
7
6
5
max(mW) I
A
A
D
D
D
DG
SO-8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.6 A
I
DM
PD @TA = 25°C Power Dissipation 2.5 W
V
GS
dv/dt Peak Diode Recovery dv/dt 1.0 V/ns
T
J
T
STG
Pulsed Drain Current 96
Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 20 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
D
°C
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
Notes through are on page 8
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3/19/02
IRF7413
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 1020 ––– VGS = 0V, VDS = 0V to 24V
oss
Drain-to-Source Breakdown Voltage 30 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance mΩ
––– ––– 11 V
––– ––– 18 VGS = 4.5V, ID = 6.0A
= 10V, ID = 7.2A
GS
Gate Threshold Voltage 1.0 ––– ––– VVDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 25 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
µA
nA
V
= 24V, VGS = 0V
DS
= 20V
GS
V
= -20V
GS
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 16 ––– ––– SVDS = 10V, ID = 7.2A
Total Gate Charge ––– 44 66 ID = 7.2A
Gate-to-Source Charge ––– 7.9 ––– nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– 9.2 ––– VGS = 10V,
Turn-On Delay Time ––– 8.8 ––– VDD = 100V
Rise Time ––– 8.0 ––– ID = 7.2A
Turn-Off Delay Time ––– 35 ––– RG = 6.2Ω
ns
Fall Time ––– 14 ––– VGS = 10V
Input Capacitance ––– 1670 ––– VGS = 0V
Output Capacitance ––– 670 ––– VDS = 25V
Reverse Transfer Capacitance ––– 100 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 2290 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 680 ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 120 mJ
Avalanche Current ––– 7.2 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
3.1
96
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 7.2A, VGS = 0V
Reverse Recovery Time ––– 50 75 ns TJ = 25°C, IF = 7.2A
Reverse RecoveryCharge ––– 74 110 nC di/dt = 100A/µs
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D
S
IRF7413
100
)
A
(
t
10
n
e
r
r
u
C
e
c
r
1
u
o
S
-
o
t
-
n
i
a
r
0.1
D
,
D
I
2.5V
20µs PULSE W IDTH
0.01
0.1 1 10 100
Tj = 2 5°C
VDS, Drain-to-Source Voltage (V)
100
VGS
TOP 10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
B OTT OM 2. 5V
100
)
A
(
t
n
e
r
r
10
u
C
e
c
r
u
o
S
-
o
t
-
1
n
i
a
r
D
,
D
I
2.5V
20µs PULSE W IDTH
0.1
0.1 1 10 100
Tj = 150°C
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
12A
VGS
TOP 10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
B OTT OM 2. 5V
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
D
I
Fig 3. Typical Transfer Characteristics
TJ = 150°C
10
1
0
2.0 3.0 4.0 5.0 6.0
TJ = 25°C
V
= 15V
DS
20µs PULSE W IDTH
VGS, Gate-to-Source Voltage (V)
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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