International Rectifier IRF7401 Datasheet

PD - 9.1244C

A

IRF7401

HEXFET® Power MOSFET

l Generation V Technology
l Ultra Low On-Resistance
l N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.

The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.

S

S

S

1

2

3

4

Top View

A

8

D

7

D

6

D

5

DG

R

DS(on)

V

DSS

= 20V

= 0.022Ω

SO-8

Absolute Maximum Ratings

Parameter Max. Units

ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ 4.5V 10
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 8.7
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 7.0
I

DM

PD @TA = 25°C Power Dissipation 2.5 W

V

GS

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J, TSTG

Pulsed Drain Current  35

Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 12 V

Junction and Storage Temperature Range -55 to + 150 °C

A

Thermal Resistance Ratings

Parameter Typ. Max. Units

R

θJA

Maximum Junction-to-Ambient ––– 50

°C/W

02/13/01

IRF7401

Electrical Characteristics @ T

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(ON)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.044 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance
Gate Threshold Voltage 0.70 ––– ––– VVDS = VGS, ID = 250µA

Forward Transconductance 11 ––– ––– SVDS = 15V, ID = 4.1A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V

Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
Total Gate Charge ––– ––– 48 ID = 4.1A
Gate-to-Source Charge ––– ––– 5.1 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– ––– 20 VGS = 4.5V, See Fig. 6 and 12 
Turn-On Delay Time ––– 13 ––– VDD = 10V
Rise Time ––– 72 ––– ID = 4.1A
Turn-Off Delay Time ––– 65 ––– RG = 6.0Ω
Fall Time ––– 92 ––– RD = 2.4Ω, See Fig. 10 

Internal Drain Inductance ––– 2.5 –––

Internal Source Inductance ––– 4.0 –––

Input Capacitance ––– 1600 ––– VGS = 0V
Output Capacitance ––– 690 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 310 ––– ƒ = 1.0MHz, See Fig. 5

= 25°C (unless otherwise specified)

J

––– ––– 0.022 VGS = 4.5V, ID = 4.1A 
––– ––– 0.030 VGS = 2.7V, ID = 3.5A 

––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125 °C

Ω

µA

nA

ns

Between lead tip

nH

and center of die contact

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 I

SD

TJ ≤ 150°C

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

––– ––– 3.1

––– ––– 35

Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 2.0A, VGS = 0V 
Reverse Recovery Time ––– 39 59 ns TJ = 25°C, IF = 4.1A
Reverse RecoveryCharge ––– 42 63 nC di/dt = 100A/µs
Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

≤ 4.1A, di/dt ≤ 100A/µs, V

DD

≤ V

(BR)DSS

 Surface mounted on FR-4 board, t ≤ 10sec.

,

D

A

G

S



IRF7401

)

A

)

A

A

)

A

1000

V G S
TO P 7. 5V

5.0 V

4.0 V

3.5 V

3.0 V

2.5 V

2.0 V
BOT TOM 1.5V

100

10

D

I , D rain-to-Source C urrent (A)

1

0.1 1 10 100

V , Drain -to - S o ur c e Voltage (V

DS

1.5V
20µs PULSE WIDTH

T = 25 °C

A

Fig 1. Typical Output Characteristics

1000

1000

V G S
TO P 7 .5V

5.0 V

4.0 V

3.5 V

3.0 V

2.5 V

2.0 V
BOT TOM 1.5V

100

10

1.5V

D

I , D ra in -to- S o u rc e Cu rre n t (A )

20µs PULSE WIDTH
T = 150 °C

1

0.1 1 10 10 0

V , Drain -to - S o ur c e Voltage (V

DS

J

Fig 2. Typical Output Characteristics

2.0

I = 6.9 A

D

T = 25°C

100

10

D

I , D rain- to-S o urce Curre nt (A )

1

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

V , G a te - to -Source Voltage (V)

GS

J

T = 150°C

J

V = 15V

DS

20µs PULSE W IDTH

Fig 3. Typical Transfer Characteristics

1.5

1.0

(Normalized)

0.5

DS(on)

R , D r ain -to- S ou rc e On R es is ta nce

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature (°C

J

Fig 4. Normalized On-Resistance

Vs. Temperature

V = 4.5V

GS