INTERNATIONAL RECTIFIER IRF 7341 Datasheet

PD -91703A

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IRF7341

l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.

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Top View

HEXFET® Power MOSFET

8

D

V

7

D

6

D

5

D

R

DS(on)

SO-8

= 55V

DSS

= 0.050Ω

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 4.7
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 3.8 A
I

DM

PD @TC = 25°C Power Dissipation 2.0
PD @TC = 70°C Power Dissipation 1.3

V

GS

V

GSM

E

AS

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J, TSTG

Drain- Source Voltage 55 V

Pulsed Drain Current  38

W

Linear Derating Factor 0.016 W/°C
Gate-to-Source Voltage ± 20 V
Gate-to-Source Voltage Single Pulse tp<10µs 30 V
Single Pulse Avalanche Energy 72

Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Typ. Max. Units

R

θJA

Maximum Junction-to-Ambient ––– 62.5 °C/W

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IRF7341

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.059 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance

––– 0.043 0.050 V
––– 0.056 0.065 VGS = 4.5V, ID = 3.8A 

Ω

= 10V, ID = 4.7A 

GS

Gate Threshold Voltage 1.0 –– – ––– V VDS = VGS, ID = 250µA
Forward Transconductance 7.9 ––– ––– S VDS = 10V, ID = 4.5A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– – –– 100 VGS = 20V

––– ––– 2.0 VDS = 55V, VGS = 0V
––– ––– 25 VDS = 55V, VGS = 0V, TJ = 55°C

µA

nA

Total Gate Charge ––– 24 36 ID = 4.5A
Gate-to-Source Charge ––– 2.3 3.4 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– 7.0 10 VGS = 10V, See Fig. 10 
Turn-On Delay Time ––– 8.3 12 VDD = 28V
Rise Time ––– 3.2 4.8 ID = 1.0A
Turn-Off Delay Time ––– 32 48 RG = 6.0Ω

ns

Fall Time ––– 13 20 RD = 28Ω, 
Input Capacitance ––– 740 ––– VGS = 0V
Output Capacitance ––– 190 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 71 ––– ƒ = 1.0MHz, See Fig. 9

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

 





2.0
A

38

Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 2.0A, VGS = 0V 
Reverse Recovery Time ––– 60 90 n s TJ = 25°C, IF = 2.0A
Reverse RecoveryCharge ––– 120 170 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

= 25°C, L = 6.5mH

J

= 4.7A. (See Figure 8)

AS

 I

≤ 4.7A, di/dt ≤ 220A/µs, V

SD

DD

≤ V

TJ ≤ 150°C

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

(BR)DSS

,

 When mounted on 1 inch square copper board, t<10 sec

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IRF7341

100

10

TOP

BOTTOM

VGS
15V
12V
10V

8.0V

6.0V

4.5V

4.0V

3.5V

3.0V

3.0V

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

1

0.1 1 10 100

V , Drain-to-Sou rce Voltage (V)

DS

J

Fig 1. Typical Output Characteristics

100

100

10

TOP

BOTTOM

VGS
15V
12V
10V

8.0V

6.0V

4.5V

4.0V

3.5V

3.0V

3.0V

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

T = 150 C

°

J

Fig 2. Typical Output Characteristics

100

°

T = 25 C

J

°

T = 150 C

T = 150 C

J

10

D

I , Drain-to-Source Current (A)

V = 25V

DS

1

3 4 5 6

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

°

10

1

SD

I , Reverse Drain Current (A)

0.1

0.2 0.5 0.8 1.1 1.4

Fig 4. Typical Source-Drain Diode

J

°

T = 25 C

J

V = 0 V

GS

V ,Source-to-Drain Voltage (V)

SD

Forward Voltage

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