International Rectifier IRF7303 Datasheet
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
S1
G1
S2
G2
1
2
3
4
Top View
PD - 9.1239D
IRF7303
HEXFET® Power MOSFET
8
D1
7
D1
6
D2
5
D2
R
DS(on)
V
DSS
= 30V
= 0.050Ω
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
SO-8
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ 10V 5.3
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.9
@ TA = 70°C Continuous Drain Current, VGS @ 10V 3.9
I
D
I
DM
= 25°C Power Dissipation 2.0 W
P
D @TA
V
GS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J, TSTG
Pulsed Drain Current 20
Linear Derating Factor 0.016 W/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance Ratings
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient –– – 62.5
°C/W
A
8/25/97
IRF7303
Electrical Characteristics @ T
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.032 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 5.2 ––– ––– S VDS = 15V, ID = 2.4A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100 V
Total Gate Charge ––– ––– 25 ID = 2.4A
Gate-to-Source Charge ––– ––– 2.9 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– ––– 7.9 VGS = 10V, See Fig. 6 and 12
Turn-On Delay Time ––– 6.8 ––– VDD = 15V
Rise Time ––– 21 ––– ID = 2.4A
Turn-Off Delay Time ––– 22 ––– RG = 6.0Ω
Fall Time ––– 7.7 ––– RD = 6.2Ω, See Fig. 10
Internal Drain Inductance ––– 4.0 –––
Internal Source Inductance ––– 6.0 – – –
Input Capacitance – –– 520 ––– VGS = 0V
Output Capacitance ––– 180 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 72 ––– ƒ = 1.0MHz, See Fig. 5
= 25°C (unless otherwise specified)
J
––– ––– 0.050 V
––– ––– 0.080 V
––– ––– 1.0 VDS = 24V, VGS = 0V
––– ––– 25 V
ΩR
µA
nA
= 10V, ID = 2.4A
GS
= 4.5V, ID = 2.0A
GS
= 24V, VGS = 0V, TJ = 125 °C
DS
= 20V
GS
= - 20V
GS
ns
Between lead tip
nH
and center of die contact
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
TJ ≤ 150°C
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 2.5
––– ––– 20
Diode Forward Voltage –– – ––– 1.0 V TJ = 25°C, IS = 1.8A, VGS = 0V
Reverse Recovery Time ––– 47 71 ns TJ = 25°C, IF = 2.4A
Reverse RecoveryCharge ––– 56 84 nC di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
≤ 2.4A, di/dt ≤ 73A/µs, V
DD
≤ V
(BR)DSS
,
Surface mounted on FR-4 board, t ≤ 10sec.
D
A
G
S
IRF7303
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
100
4.5V
10
D
I , Drain- to-S o urce C u rrent (A )
20µs PUL SE WID TH
T = 25°C
1
0.1 1 10 100
V , D rain-to-S ourc e V olta ge (V )
DS
J
Fig 1. Typical Output Characteristics
100
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
100
4.5V
10
D
I , Dra in -to-S ource C urrent (A)
20µs PULSE WIDTH
T = 150°C
A
1
0.1 1 10 100
V , Drain-to-So urc e V oltag e (V)
DS
J
A
Fig 2. Typical Output Characteristics
2.0
I = 4.0 A
D
T = 25°C
J
T = 150°C
J
1.5
1.0
(Norm a li zed)
0.5
D
I , Drain-to-Sou rce Cur rent (A)
10
45678910
V , Ga te-to-So urce Voltage (V)
GS
V = 15V
DS
20µs PULSE W IDTH
DS(on)
R , Dra in-to -S our ce O n R e sista nc e
A
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
V = 10V
GS
A
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