International Rectifier IRF7301 Datasheet
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.
S1
G1
S2
G2
1
2
3
4
To p V iew
8
D1
7
D1
6
D2
5
D2
PD - 9.1238C
IRF7301
V
= 20V
DSS
R
DS(on)
= 0.050Ω
SO-8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ 4.5V 5.7
@ TA = 25°C Continuous Drain Current, VGS @ 4.5V 5.2
I
D
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 4.1
I
DM
= 25°C Power Dissipation 2.0 W
P
D @TA
V
GS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J, TSTG
Pulsed Drain Current 21
Linear Derating Factor 0.016 W/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance Ratings
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient ––– 62.5
°C/W
A
8/25/97
IRF7301
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.044 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.050 V
––– ––– 0.070 V
ΩR
= 4.5V, ID = 2.6A
GS
= 2.7V, ID = 2.2A
GS
Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 8.3 ––– ––– S VDS = 15V, ID = 2.6A
Drain-to-Source Leakage Current
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 V
Gate-to-Source Forward Leakage ––– ––– 10 0 V
Gate-to-Source Reverse Leakage ––– ––– -100 V
µA
nA
= 16V, VGS = 0V, TJ = 125 °C
DS
= 12V
GS
= - 12V
GS
Total Gate Charge ––– ––– 20 ID = 2.6A
Gate-to-Source Charge ––– ––– 2.2 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– ––– 8.0 VGS = 4.5V, See Fig. 6 and 12
Turn-On Delay Time ––– 9.0 ––– VDD = 10V
Rise Time ––– 42 ––– ID = 2.6A
Turn-Off Delay Time ––– 32 ––– RG = 6.0Ω
ns
Fall Time ––– 51 ––– RD = 3.8Ω, See Fig. 10
Internal Drain Inductance ––– 4.0 –––
Internal Source Inductance ––– 6.0 –––
Between lead tip
nH
and center of die contact
Input Capacitance ––– 66 0 ––– VGS = 0V
Output Capacitance ––– 2 80 – –– pF VDS = 15V
Reverse Transfer Capacitance ––– 140 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
TJ ≤ 150°C
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 2.5
––– ––– 21
Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 1.8A, VGS = 0V
Reverse Recovery Time ––– 29 44 ns TJ = 25°C, IF = 2.6A
Reverse RecoveryCharge ––– 22 3 3 nC di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
≤ 2.6A, di/dt ≤ 100A/µs, V
DD
≤ V
(BR)DSS
,
Surface mounted on FR-4 board, t ≤ 10sec.
D
A
G
S
IRF7301
1000
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTT OM 1.5V
100
10
D
I , D rain-to-Sourc e Current (A)
20µs PULSE WI DTH
1.5V
T = 25 °C
1
0.1 1 10 100
V , Dra in-to-So urc e V oltag e (V)
DS
J
A
1000
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTT OM 1.5V
100
10
D
I , Dra in -to-S ource C urrent (A)
1.5V
20µs PULSE WIDTH
T = 150°C
1
0.1 1 10 100
V , Dra in-to-So urc e V olta ge (V )
DS
J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
100
2.0
I = 4 .3A
D
A
T = 25°C
10
J
T = 150°C
J
1.5
1.0
(Norm alized)
0.5
D
I , Drain-to-Sou rce Cur rent (A)
1
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V , Ga te-to-So urce Voltage (V)
GS
V = 15 V
DS
20µs PULSE W IDTH
A
DS(on)
R , D ra in-to-S ou rc e O n R es ista nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Ju nc tion Te m peratu re ( °C )
J
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
V = 4.5 V
GS
A
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