International Rectifier IRF7103 Datasheet
l Adavanced Process Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
S1
G1
S2
G2
1
2
3
4
Top View
PD - 9.1095B
IRF7103
HEXFET® Power MOSFET
8
D1
7
D1
6
D2
5
D2
R
DS(on)
V
= 50V
DSS
= 0.130Ω
ID = 3.0A
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
SO-8
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.0
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.3
I
DM
PD @TC = 25°C Power Dissipation 2.0
V
GS
dv/dt Peak Diode Recovery dv/dt 4.5 V/nS
T
J, TSTG
Pulsed Drain Current 10
W
Linear Derating Factor 0.016 W/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150
°C
Thermal Resistance Ratings
Parameter Min. Typ. Max. Units
R
Maximum Junction-to-Ambient –––
θJA
–––
62.5 °C/W
A
8/25/97
IRF7103
Electrical Characteristics @ T
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
(BR)DSS
Drain-to-Source Breakdown Voltage 50 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.049 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
Forward Transconductance ––– 3.8 ––– S VDS = 15V, ID = 3.0A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100 V
Total Gate Charge ––– 12 30 ID = 2.0A
Gate-to-Source Charge ––– 1.2 ––– nC VDS = 25V
Gate-to-Drain ("Miller") Charge ––– 3.5 –– – VGS = 10V
Turn-On Delay Time ––– 9.0 20 VDD = 25V
Rise Time ––– 8.0 20 ID = 1.0A
Turn-Off Delay Time ––– 45 70 RG = 6.0Ω
Fall Time ––– 25 50 RD = 25Ω
Internal Drain Inductance ––– 4.0 –––
Internal Source Inductance ––– 6.0 – – –
Input Capacitance ––– 290 ––– VGS = 0V
Output Capacitance ––– 140 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 37 ––– ƒ = 1.0MHz
= 25°C (unless otherwise specified)
J
––– 0.11 0.13 V
––– 0.16 0.20 V
––– ––– 2.0 VDS = 40V, VGS = 0V
––– ––– 25 V
ΩR
µA
nA
= 10V, ID = 3.0A
GS
= 4.5V, ID = 1.5A
GS
= 40V, VGS = 0V, TJ = 55 °C
DS
= 20V
GS
= - 20V
GS
ns
Between lead,6mm(0.25in.)
nH
from package and center
of die contact
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
TJ ≤ 150°C
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 2.0
––– ––– 12
Diode Forward Voltage –– – ––– 1.2 V TJ = 25°C, IS = 1.5A, VGS = 0V
Reverse Recovery Time ––– 70 100 n s TJ = 25°C, IF = 1.5A
Reverse RecoveryCharge ––– 1 10 1 70 nC di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
≤ 1.8A, di/dt ≤ 90A/µs, V
DD
≤ V
(BR)DSS
,
Surface mounted on FR-4 board, t ≤ 10sec.
D
A
G
S
IRF7103
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