International Rectifier IRF6645, IRF6645TR1 Datasheet
www.irf.com 1
8/5/05
IRF6645
DirectFET Power MOSFET
DirectFET ISOMETRIC
SJ
PD - 97006
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Description
The IRF6645 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6645 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
l RoHs Compliant Containing No Lead and Bromide
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 5.0mH, RG = 25Ω, I
AS
= 3.4A.
Notes:
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ TA = 25°C
Continuous Drain Current, V
GS
@ 10V
e
ID @ TA = 70°C
Continuous Drain Current, V
GS
@ 10V
e
A
I
D
@ TC = 25°C
Continuous Drain Current, V
GS
@ 10V
f
I
DM
Pulsed Drain Current
g
E
AS
Single Pulse Avalanche Energy
h
mJ
I
AR
Avalanche Current
g
A
29
Max.
4.5
25
45
±20
100
5.7
3.4
4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
20
30
40
50
60
70
80
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
TJ = 25°C
TJ = 125°C
ID = 3.4A
0481216
Q
G
Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 80V
VDS= 50V
ID= 3.4A
V
DSS
V
GS
R
DS(on)
100V max ±20V max
28mΩ@ 10V
Q
g tot
Q
gd
V
gs(th)
14nC 4.8nC 4.0V
SH SJ SP MZ MN
IRF6645
2 www.irf.com
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by max. junction temperature.
S
D
G
Electrical Characteristic @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 28 35
mΩ
V
GS(th)
Gate Threshold Voltage 3.0 ––– 4.9 V
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -12 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 7.4 ––– ––– S
Q
g
Total Gate Charge ––– 14 20
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 3.1 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 0.8 ––– nC
Q
gd
Gate-to-Drain Charge ––– 4.8 7.2
Q
godr
Gate Charge Overdrive ––– 5.3 ––– See Fig. 15
Q
sw
Switch Charge (Q
gs2
+ Qgd)
––– 5.6 –––
Q
oss
Output Charge ––– 7.2 ––– nC
R
G
Gate Resistance
–––
1.0 –––
Ω
t
d(on)
Turn-On Delay Time ––– 9.2 –––
t
r
Rise Time ––– 5.0 –––
t
d(off)
Turn-Off Delay Time ––– 18 ––– ns
t
f
Fall Time ––– 5.1 –––
C
iss
Input Capacitance ––– 890 –––
C
oss
Output Capacitance ––– 180 ––– pF
C
rss
Reverse Transfer Capacitance ––– 40 –––
C
oss
Output Capacitance ––– 870 –––
C
oss
Output Capacitance ––– 100 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 25
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 45
(Body Diode)d
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 31 47 ns
Q
rr
Reverse Recovery Charge ––– 40 60 nC
I
D
= 3.4A
V
DS
= 80V, VGS = 0V, TJ = 125°C
V
GS
= 20V
V
GS
= -20V
V
GS
= 10V
VDS = 10V, ID = 3.4A
V
DS
= 50V
T
J
= 25°C, IF = 3.4A, VDD = 50V
di/dt = 100A/µs c
T
J
= 25°C, IS = 3.4A, VGS = 0V c
showing the
integral reverse
p-n junction diode.
V
DS
= VGS, ID = 50µA
V
DS
= 100V, VGS = 0V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, ID = 5.7A c
V
DS
= 16V, VGS = 0V
V
DD
= 50V, VGS = 10Vc
V
GS
= 0V
ƒ = 1.0MHz
ID = 3.4A
MOSFET symbol
R
G
=6.2Ω
VDS = 25V
Conditions
VGS = 0V, VDS = 80V, f=1.0MHz
V
GS
= 0V, VDS = 1.0V, f=1.0MHz
IRF6645
www.irf.com 3
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x Zthja + Ta
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Surface mounted on 1 in. square Cu
board (still air).
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
Mounted to a PCB with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu, steady state.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
T
C
measured with thermocouple incontact with top (Drain) of part.
R
θ
is measured at T
J
of approximately 90°C.
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= τi/Ri
Ci= τi/Ri
τ
4
τ
4
R
4
R
4
τ
C
τ
C
τ
5
τ
5
R
5
R
5
Ri (°C/W) τi (sec)
0.6677 0.000066
1.0463 0.000896
1.5612 0.004386
29.2822 0.686180
25.4550 32
A
Absolute Maximum Ratings
Parameter Units
PD @TA = 25°C
Power Dissipation
c
W
P
D
@TA = 70°C
Power Dissipation
c
PD @TC = 25°C
Power Dissipation
f
T
P
Peak Soldering Temperature °C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
Junction-to-Ambient
cg
––– 58
R
θJA
Junction-to-Ambient
dg
12.5 –––
R
θJA
Junction-to-Ambient
eg
20 ––– °C/W
R
θJC
Junction-to-Case
fg
––– 3.0
R
θJ-PCB
Junction-to-PCB Mounted 1.0 –––
270
-40 to + 150
Max.
42
3.0
1.4
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