International Rectifier IRF6602 Datasheet

PD - 94363A

IRF6602

l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount

DirectFET

V

DSS

20V 13mΩ@VGS = 10V 11A

19mΩ@VGS = 4.5V 8.8A

R

DS(on)

TM

Power MOSFET

max I

D

Techniques

DirectFET™ ISOMETRIC

Description

The IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm
profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly
equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6602 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 11
ID @ TC = 70°C Continuous Drain Current, VGS @ 4.5V 8.8 A
I

DM

PD @TC = 25°C Power Dissipation 2.3
PD @TC = 70°C Power Dissipation 1.5

V

GS

T

J, TSTG

Drain- Source Voltage 20 V

Pulsed Drain Current  88

W

Linear Derating Factor 18 mW/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θJA

R

θJA

R

θJA

R

θJC

R

θJ-PCB

Junction-to-Ambient ––– 55

Junction-to-Ambient 12.5 –––
Junction-to-Ambient 20 ––– °C/W
Junction-to-Case 3.0 –––
Junction-to-PCB mounted 1.0 –––

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04/24/02

IRF6602

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions

g

fs

Q

g

Q

g

Q

gs1

Q

gs2

Q

gd

Q

sw

Q

oss

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Avalanche Characteristics

Symbol Parameter Typ. Max. Units

E

AS

I

AR

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

rr

Q

rr

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Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient

J

Static Drain-to-Source On-Resistance

––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA

––– 10 13 VGS = 10V, ID = 11A 
––– 14 19 VGS = 4.5V, ID = 8.8A 

mΩ

Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA

Drain-to-Source Leakage Current

––– ––– 20
––– ––– 125 VDS = 16V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage ––– ––– 200 V
Gate-to-Source Reverse Leakage ––– ––– -200

VDS = 16V, VGS = 0V

µA

= 20V

GS

nA

V

= -20V

GS

Forward Transconductance 20 ––– ––– SVDS = 10V, ID = 8.8A
Total Gate Charge Cont FET ––– 13 20 VGS = 5.0V, VDS = 10V, ID = 8.8A
Total Gate Charge Sync FET ––– 11 ––– VGS = 5.0V, VDS < 100mV
Pre-Vth Gate-Source Charge ––– 3.5 ––– VDS = 16V, ID = 8.8A
Post-Vth Gate-Source Charge ––– 1.3 ––– nC
Gate to Drain Charge ––– 4.8 –––
Switch Charge (Q

+ Qgd) ––– 6.1 –––

gs2

Output Charge ––– 19 ––– VDS = 16V, VGS = 0V
Turn-On Delay Time ––– 11 ––– VDD = 15V
Rise Time ––– 58 ––– ID = 8.8A
Turn-Off Delay Time ––– 15 ––– RG = 1.8Ω

ns

Fall Time ––– 5.5 ––– VGS = 4.5V 
Input Capacitance ––– 1420 ––– VGS = 0V
Output Capacitance ––– 960 ––– VDS = 10V
Reverse Transfer Capacitance ––– 100 ––– pF ƒ = 1.0MHz

Single Pulse Avalanche Energy ––– 97 mJ
Avalanche Current ––– 8.8 A

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

Diode Forward Voltage

––– –––

––– –––
––– 0.83 1.2 V TJ = 25°C, IS = 8.8A, VGS = 0V 

––– 0.65 ––– TJ = 125°C, IS = 8.8A, VGS = 0V 

11

88

showing the

A

p-n junction diode.

Reverse Recovery Time ––– 42 62 ns TJ = 25°C, IF = 8.8A, VR=15V
Reverse Recovery Charge ––– 51 77 nC di/dt = 100A/µs



Reverse Recovery Time ––– 43 64 ns TJ = 125°C, IF = 8.8A, VR=15V
Reverse Recovery Charge ––– 55 82 nC di/dt = 100A/µs



G

D

S

IRF6602

(

)

1000

100

10

, Drain-to-Source Current (A)

D

I

VGS

TOP 10V

5.0V

4.5V

4.0V

3.5V

3.3V

3.0V
BOTTOM 2.7V

2.7V

20µs PULSE WIDTH

1

0.1 1 10 100

Tj = 25°C

VDS, Drain-to-Source Voltage (V)

100.00

)

(Α

TJ = 150°C

1000

100

10

, Drain-to-Source Current (A)

D

I

VGS

TOP 10V

5.0V

4.5V

4.0V

3.5V

3.3V

3.0V
BOTTOM 2.7V

2.7V

20µs PULSE WIDTH
Tj = 150°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

1.5

11A

I =



D

TJ = 25°C

10.00

, Drain-to-Source Current

D

I

1.00

2.0 2.5 3.0 3.5 4.0 4.5 5.0

V

= 15V

DS

20µs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature

J

Fig 4. Normalized On-Resistance

V =

10V



GS

°

C

Vs. Temperature

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