International Rectifier IRF644NS, IRF644NL, IRF644N Datasheet
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
Description
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
G
TO-220AB
IRF644N
PD - 94107
IRF644N
IRF644NS
IRF644NL
HEXFET® Power MOSFET
D
S
D2Pak
IRF644NS
V
R
DS(on)
= 250V
DSS
= 240mΩ
ID = 14A
TO-262
IRF644NL
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 9.9 A
I
DM
PD @TC = 25°C Power Dissipation 150 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 7.9 V/ns
T
J
T
STG
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Pulsed Drain Current 56
Linear Derating Factor 1.0 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 180 mJ
Avalanche Current 8.4 A
Repetitive Avalanche Energy 15 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
3/15/01
IRF644N/644NS/644NL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 250 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.33 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 240 mΩ VGS = 10V, ID = 8.4A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 8.8 ––– ––– SVDS = 50V, ID = 8.4A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 200V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 250V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 54 ID = 8.4A
Gate-to-Source Charge ––– ––– 9.2 nC VDS = 200V
Gate-to-Drain ("Miller") Charge ––– ––– 26 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 10 ––– VDD = 125V
Rise Time ––– 21 ––– ID = 8.4A
Turn-Off Delay Time ––– 30 ––– RG = 6.2Ω
ns
Fall Time ––– 17 ––– VGS = 10V, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1060 ––– VGS = 0V
Output Capacitance ––– 140 ––– VDS = 25V
Reverse Transfer Capacitance ––– 38 ––– pF ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
14
56
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V
Reverse Recovery Time ––– 165 250 ns TJ = 25°C, IF = 14A
Reverse Recovery Charge ––– 1.0 1.6 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case ––– 1.0
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Junction-to-Ambient (PCB mount)** ––– 40
2 www.irf.com
D
S
IRF644N/644NS/644NL
100
10
1
, Drain-to-Source Current (A)
D
I
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
100
T = 175 C
°
J
100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
1
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.5
3.0
I =
D
14A
2.5
°
T = 25 C
J
10
2.0
1.5
(Normalized)
1.0
D
I , Drain-to-Source Current (A)
V = 50V
DS
1
4 6 8 10 11 13 15
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRF644N/644NS/644NL
10000
1000
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
+ Cgd, C
gd
Ciss
Coss
100
C, Capacitance(pF)
Crss
10
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
SHORTED
ds
20
I =
8.4A
D
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 12 24 36 48 60
Q , Total Gate Charge (nC)
G
V = 200V
DS
V = 125V
DS
V = 50V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
T = 175 C
10
1
SD
I , Reverse Drain Current (A)
0.1
0.0 0.4 0.8 1.1 1.5
V ,Source-to-Drain Voltage (V)
SD
°
J
°
T = 25 C
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
100
10
1
, Drain-to-Source Current (A)
D
Tc = 25°C
I
Tj = 175°C
Single Pulse
0.1
1 10 100 1000
Fig 8. Maximum Safe Operating Area
LIMITED BY RDS(on)
V
, Drain-toSource Voltage (V)
DS
100µsec
1msec
10msec
Forward Voltage
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