International Rectifier IRF640L, IRF640STRL, IRF640STR, IRF640S Datasheet
IRF640S/L
HEXFET® Power MOSFET
PD -90902B
S
D
G
Description
7/20/99
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.0
R
θJA
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
Thermal Resistance
°C/W
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 18
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 11 A
I
DM
Pulsed Drain Current 72
PD @TA = 25°C Power Dissipation 3.1 W
PD @TC = 25°C Power Dissipation 130 W
Linear Derating Factor 1.0 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 580 mJ
I
AR
Avalanche Current 18 A
E
AR
Repetitive Avalanche Energy 13 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
l Surface Mount (IRF640S)
l Low-profile through-hole (IRF640L)
l Available in Tape & Reel (IRF640S)
l Dynamic dv/dt Rating
l 150°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
2
D Pak
TO-262
V
DSS
= 200V
R
DS(on)
= 0.18Ω
ID = 18A
Third Generation HEXFETs from International Rectifier provide
the designer with the best combinations of fast switching ,
ruggedized device design, low on-resistance and costeffectiveness.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D
2
Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.The through-hole version (IRF640L) is
available for low-profile applications.
www.irf.com 1
IRF640S/L
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.29 ––– V/°C Reference to 25°C, ID = 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.18 Ω VGS = 10V, ID = 11A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
g
fs
Forward Transconductance 6.7 ––– ––– S VDS = 50V, ID = 11A
––– ––– 25
µA
VDS = 200V, VGS = 0V
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
VGS = -20V
Q
g
Total Gate Charge ––– ––– 70 ID = 18A
Q
gs
Gate-to-Source Charge ––– ––– 13 nC VDS =160V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 39 VGS = 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 14 ––– VDD =100V
t
r
Rise Time ––– 51 ––– ID = 18A
t
d(off)
Turn-Off Delay Time ––– 45 –– – RG = 9.1Ω
t
f
Fall Time ––– 36 ––– RD = 5.4Ω, See Fig. 10
Between lead,
––– –––
and center of die contact
C
iss
Input Capacitance ––– 1300 ––– VGS = 0V
C
oss
Output Capacitance ––– 430 ––– pF VDS = 25V
C
rss
Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
nH
7.5
L
S
Internal Source Inductance
V
DD
= 50V, starting TJ = 25°C, L = 2.7mH
RG = 25Ω, I
AS
= 18A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
I
SD
≤ 18A, di/dt ≤ 150A/µs, V
DD
≤ V
(BR)DSS
,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF640 data and test conditions
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 18A, VGS = 0V
t
rr
Reverse Recovery Time ––– 300 610 n s TJ = 25°C, IF = 18A
Q
rr
Reverse Recovery Charge ––– 3 .4 7.1 µC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
S
D
G
A
18
72
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
IRF640S/L
www.irf.com 3
Fig 1. Typical Output Characteristics,
TJ = 25oC
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics,
TJ = 175oC
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