International Rectifier IRF634NL, IRF634N Datasheet
PD - 94310
IRF634N
IRF634NS
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
Description
Fifth Generation HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and low
package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF634NL) is available for lowprofile application.
G
TO-220AB
IRF634N
HEXFET® Power MOSFET
D
R
S
D2Pak
IRF634NS
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 8.0
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.6 A
I
DM
PD @TC = 25°C Power Dissipation 88 W
PD @TA = 25°C Power Dissipation 3.8
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 7.3 V/ns
T
J
T
STG
Pulsed Drain Current 32
Linear Derating Factor 0.59 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 110 mJ
Avalanche Current 4.8 A
Repetitive Avalanche Energy 8.8 mJ
Operating Junction and -55 to +175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
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IRF634NL
V
= 250V
DSS
= 0.435Ω
DS(on)
ID = 8.0A
TO-262
IRF634NL
°C
9/10/01
IRF634N/S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 250 ––– – – – V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.33 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance – –– ––– 0.435 Ω VGS = 10V, ID = 4.8A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 5.4 ––– ––– S VDS = 50V, ID = 4.8A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 200V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 250V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 34 ID = 4.8A
Gate-to-Source Charge ––– ––– 6.5 nC VDS = 200V
Gate-to-Drain ("Miller") Charge ––– ––– 16 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 8.4 ––– VDD = 125V
Rise Time ––– 16 ––– ID = 4.8A
Turn-Off Delay Time ––– 28 ––– RG = 1.3Ω
ns
Fall Time ––– 15 ––– VGS = 10V, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 620 ––– VGS = 0V
Output Capacitance ––– 84 ––– VDS = 25V
Reverse Transfer Capacitance ––– 23 ––– pF ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
8.0
32
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 4.8A, VGS = 0V
Reverse Recovery Time ––– 130 200 ns TJ = 25°C, IF = 4.8A
Reverse Recovery Charge ––– 650 980 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case ––– 1.7
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Junction-to-Ambient (PCB mount) ––– 40
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D
S
IRF634N/S/L
100
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
J
4.5V
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.5
7.9A
I =
D
3.0
°
T = 175 C
10
J
1
D
I , Drain-to-Source Current (A)
0.1
4.0 5.0 6.0 7.0 8.0 9.0
V , Gate-to-Source Voltage (V)
°
T = 25 C
J
GS
V = 50V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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IRF634N/S/L
1200
1000
800
600
400
C, Capacitance(pF)
200
0
Ciss
Coss
Crss
1 10 100 1000
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
ds
gd
iss
C
rss
C
oss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
SHORTED
20
I =
4.8A
D
V = 200V
DS
V = 125V
DS
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40
V = 50V
DS
FOR TEST CIRCUIT
SEE FIGURE
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
13
10
°
T = 175 C
J
1
°
T = 25 C
SD
I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
1
, Drain-to-Source Current (A)
D
Tc = 25°C
I
Tj = 175°C
Single Pulse
0.1
1 10 100 1000
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100µsec
1msec
10msec
Forward Voltage
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