International Rectifier IRF630NL, IRF630N, IRF630NS Datasheet
PD - 94005A
IRF630N
IRF630NS
IRF630NL
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
G
Description
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF630NL) is available for lowprofile application.
TO-220AB
IRF630N
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.3
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.5 A
I
DM
PD @TC = 25°C Power Dissipation 82 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 8.1 V/ns
T
J
T
STG
Pulsed Drain Current 37
Linear Derating Factor 0.5 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 94 mJ
Avalanche Current 9.3 A
Repetitive Avalanche Energy 8.2 mJ
Operating Junction and -55 to +175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
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HEXFET® Power MOSFET
D
V
R
DS(on)
DSS
= 200V
= 0.30Ω
ID = 9.3A
S
D2Pak
IRF630NS
TO-262
IRF630NL
°C
10/11/00
IRF630N/S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.30 Ω VGS = 10V, ID = 5.4A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 4.9 ––– ––– S VDS = 50V, ID = 5.4A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 200V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 35 ID = 5.4A
Gate-to-Source Charge ––– ––– 6.5 nC VDS = 160V
Gate-to-Drain ("Miller") Charge ––– ––– 17 VGS = 10V
Turn-On Delay Time ––– 7.9 ––– VDD = 100V
Rise Time ––– 14 ––– ID = 5.4A
Turn-Off Delay Time ––– 27 ––– RG = 13Ω
ns
Fall Time ––– 15 ––– RD = 18Ω
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 575 ––– VGS = 0V
Output Capacitance ––– 89 ––– VDS = 25V
Reverse Transfer Capacitance ––– 25 ––– pF ƒ = 1.0MHz
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
9.3
37
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 5.4A, VGS = 0V
Reverse Recovery Time ––– 117 176 ns TJ = 25°C, IF = 5.4A
Reverse Recovery Charge ––– 542 813 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case ––– 1.83
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Junction-to-Ambient (PCB mount) ––– 40
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D
S
IRF630N/S/L
100
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
4.5V
°
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
4.5V
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.5
3.0
I =
D
9.3A
T = 175 C
10
1
D
I , Drain-to-Source Current (A)
0.1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
°
J
°
T = 25 C
J
V = 50V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120140 160180
T , Junction Temperature( C)
J
V =
Fig 4. Normalized On-Resistance
GS
10V
°
Vs. Temperature
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IRF630N/S/L
1200
1000
800
600
400
C, Capacitance(pF)
200
0
1 10 100 1000
V
= 0V, f = 1 MHZ
GS
C
= C
+ Cgd, C
iss
gs
C
= C
rss
gd
C
= C
oss
ds
Ciss
Coss
Crss
VDS, Drain-to-Source Voltage (V)
+ C
gd
SHORTED
ds
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
16
I =
5.4A
D
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 5 10 15 20 25 30
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
V = 160V
DS
V = 100V
DS
V = 40V
DS
DS(on)
100
10
T = 175 C
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2
Fig 7. Typical Source-Drain Diode
Fig 7. Typical Source-Drain Diode
°
J
T = 25 C
J
V = 0 V
GS
V ,Source-to-Drain Voltage (V)
SD
Forward Voltage
Forward Voltage
10
°
D
I , Drain Current (A)I , Drain Current (A)
1
°
= 25 C
C
T T= 175 C
J
Single Pulse
0.1
1 10 100 1000
°
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10us
100us
1ms
10ms
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