International Rectifier IRF5N5210 Datasheet
PD - 94154
HEXFET
®
POWER MOSFET
SURFACE MOUNT (SMD-1)
Product Summary
Part Number BV
DSS
IRF5N5210 -100V 0.060Ω -31A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
RDS(on) ID
IRF5N5210
100V, P-CHANNEL
SMD-1
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter Units
ID @ VGS = -10V, TC = 25°C Continuous Drain Current -31
ID @ VGS = -10V, TC = 100°C Continuous Drain Current -19
I
DM
PD @ TC = 25°C Max. Power Dissipation 125 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 4.0
T
J
T
STG
For footnotes refer to the last page
Pulsed Drain Current ➀ -124
Linear Derating Factor 1.0 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 340 mJ
Avalanche Current ➀ -19 A
Repetitive Avalanche Energy ➀ 12.5 mJ
Operating Junction -55 to 150
Storage Temperature Range
Package Mounting Surface Temperature 300 (for 5 s)
Weight 2.6 (Typical) g
www.irf.com 1
A
V/ns
o
C
03/26/01
IRF5N5210
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
LS + L
DSS
D
Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -250µA
/∆TJTemperature Coefficient of Breakdown — -0.11 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
Static Drain-to-Source On-State — — 0.06 Ω VGS = -10V, ID = -19A
Resistance
Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 10 — — S ( )VDS = -50V, IDS = -19A ➃
Zero Gate Voltage Drain Current — — -25 V
— — -250 VDS = -80V,
Gate-to-Source Leakage Forward — — -100 VGS = -20V
Gate-to-Source Leakage Reverse — — 100 VGS = 20V
Total Gate Charge — — 215 VGS =-10V, ID = -19A
Gate-to-Source Charge — — 30 nC VDS = -80V
Gate-to-Drain (‘Miller’) Charge — — 115
Turn-On Delay Time — — 28 VDD = -50V, ID = -19A,
Rise Time — — 150 VGS =-10V, RG = 2.5Ω
Turn-Off Delay Time — — 103
Fall Time — — 116
Total Inductance — 4.0 —
Ω
µA
nA
ns
nH
drain pad to center of source pad
= -100V ,VGS=0V
DS
VGS = 0V, TJ =125°C
Measured from the center of
➃
C
iss
C
oss
C
rss
Input Capacitance — 2700 — VGS = 0V, VDS = -25V
Output Capacitance — 830 — pF f = 1.0MHz
Reverse Transfer Capacitance — 470 —
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units T est Conditions
I
Continuous Source Current (Body Diode) — — - 31
Q
S
I
Pulse Source Current (Body Diode) ➀ — — -124
SM
V
Diode Forward Voltage — — -1.6 V Tj = 25°C, IS = -19A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 290 n s Tj = 25°C, IF = -19A, di/dt ≥ 100A/µs
rr
Reverse Recovery Charge — — 2.1 µCV
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
A
≤ -50V ➃
DD
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com
Junction-to-Case — — 1.0 °C/W
+ LD.
S
IRF5N5210
1000
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM
-4.5V
-4.5V
20µs PULSE WIDTH
T = 25 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
1000
1000
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM
-4.5V
-4.5V
20µs PULSE WIDTH
T = 150 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output Characteristics
2.5
-31A
I =
D
2.0
°
T = 25 C
100
10
D
-I , Drain-to-Source Current (A)
1
4 6 8 10 12
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
J
V = -50V
DS
20µs PULSE WIDTH
°
T = 150 C
J
15
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
-10V
GS
°
Vs. Temperature
www.irf.com 3
Loading...