International Rectifier IRF5M5210 Datasheet
PD - 94247
HEXFET
®
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number BV
DSS
IRF5M5210 -100V 0.07Ω -34A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
RDS(on) ID
IRF5M5210
100V, P-CHANNEL
TO-254AA
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
Parameter Units
ID @ VGS = -10V, TC = 25°C Continuous Drain Current -34
ID @ VGS = -10V, TC = 100°C Continuous Drain Current -21
I
DM
PD @ TC = 25°C Max. Power Dissipation 125 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 3.4
T
J
T
STG
For footnotes refer to the last page
Pulsed Drain Current ➀ -136
Linear Derating Factor 1.0 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 520 mJ
Avalanche Current ➀ -21 A
Repetitive Avalanche Energy ➀ 12.5 mJ
Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300 (0.063in./1.6mm from case for 10s)
Weight 9.3 (Typical) g
www.irf.com 1
A
V/ns
o
C
06/13/01
IRF5M5210
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
LS + L
C
iss
C
oss
C
rss
DSS
D
Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -250µA
/∆TJTemperature Coefficient of Breakdown — -0.12 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
Static Drain-to-Source On-State — — 0.07 Ω VGS = -10V, ID = -21A
Resistance
Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 10 — — S ( )VDS = -15V, IDS = -21A ➃
Zero Gate Voltage Drain Current — — -25 V
— — -250 VDS = -80V,
Gate-to-Source Leakage Forward — — -100 VGS = -20V
Gate-to-Source Leakage Reverse — — 100 VGS = 20V
Total Gate Charge — — 180 VGS =-10V, ID = -21A
Gate-to-Source Charge — — 25 nC VDS = -80V
Gate-to-Drain (‘Miller’) Charge — — 100
Turn-On Delay Time — — 28 VDD = -50V, ID = -21A,
Rise Time — — 150 VGS =-10V, RG = 2.5Ω
Turn-Off Delay Time — — 100
Fall Time — — 120
Total Inductance — 6.8 — Measured from drain lead (6mm /
Input Capacitance — 2730 — VGS = 0V, VDS = -25V
Output Capacitance — 824 — pF f = 1.0MHz
Reverse Transfer Capacitance — 465 —
Ω
µA
nA
ns
nH
0.25in. from package ) to source
➃
= -100V ,VGS=0V
DS
VGS = 0V, TJ =125°C
lead (6mm/0.25in. from pacakge
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
Continuous Source Current (Body Diode) — — - 34
Q
S
I
Pulse Source Current (Body Diode) ➀ — — -136
SM
V
Diode Forward Voltage — — -1.6 V Tj = 25°C, IS = -21A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 260 n s Tj = 25°C, IF = -21A, di/dt ≥ 100A/µs
rr
Reverse Recovery Charge — — 1.8 µCV
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
A
≤ -30V ➃
DD
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com
Junction-to-Case — — 1.0 °C/W
+ LD.
S
IRF5M5210
1000
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM
-4.5V
-4.5V
20µs PULSE WIDTH
T = 25 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
1000
1000
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM
-4.5V
-4.5V
20µs PULSE WIDTH
T = 150 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output Characteristics
2.5
-34A
I =
D
°
T = 25 C
J
100
T = 150 C
J
10
D
-I , Drain-to-Source Current (A)
1
4 6 8 10 12
-V , Gate-to-Source Voltage (V)
GS
15
V = -50V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
-10V
Vs. Temperature
www.irf.com 3
Loading...