International Rectifier IRF5852 Datasheet
PD - 93999
IRF5852
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
Description
These N-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5852 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and R
reduction enables an increase in current-handling
capability.
DS(on)
V
DSS
R
DS(on)
max (
Ω)Ω)
Ω) I
Ω)Ω)
D
20 V 0.090@VGS = 4.5V 2.7A
0.120@VGS = 2.5V 2.2A
TSOP-6
G1
S2
G2
1
2
3
Top View
6D1
5
4
S1
D2
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 2.7
ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 2.2 A
I
DM
PD @TA = 25°C Power Dissipation 0.96
PD @TA = 70°C Power Dissipation 0.62
V
GS
T
J, TSTG
Drain- Source Voltage 20 V
Pulsed Drain Current 11
W
Linear Derating Factor 7.7 mW/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 130 °C/W
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IRF5852
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.016 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– –– – 0.090 VGS = 4.5V, ID = 2.7A
––– –– – 0.120 VGS = 2.5V, ID = 2.2A
Ω
Gate Threshold Voltage 0.60 ––– 1.25 V VDS = VGS, ID = 250µA
Forward Transconductance 5.2 ––– ––– S VDS = 10V, ID = 2.7A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 4.0 6.0 ID = 2.7A
Gate-to-Source Charge ––– 0.95 ––– nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– 0.88 ––– VGS = 4.5V
Turn-On Delay Time ––– 6.6 ––– VDD = 10V
Rise Time ––– 1. 2 ––– ID = 1.0A
Turn-Off Delay Time ––– 15 ––– RG = 6.2Ω
ns
Fall Time ––– 2. 4 ––– VGS = 4.5V
Input Capacitance ––– 400 ––– VGS = 0V
Output Capacitance ––– 48 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 32 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
–––
0.96
11
A
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 0.96A, VGS = 0V
Reverse Recovery Time ––– 25 38 ns TJ = 25°C, IF = 0.96A
Reverse Recovery Charge ––– 6.5 9.8 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
IRF5852
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM
1.5V
1.50V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
100
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM
1.5V
1.50V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output Characteristics
2.0
I =
D
2.7A
°
T = 25 C
10
1
D
I , Drain-to-Source Current (A)
0.1
1.5 2.0 2.5 3.0
V , Gate-to-Source Voltage (V)
GS
J
V = 15V
DS
20µs PULSE WIDTH
T = 150 C
J
Fig 3. Typical Transfer Characteristics
°
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
4.5V
GS
°
Vs. Temperature
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