International Rectifier IRF5851 Datasheet
PD-93998A
IRF5851
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
Description
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two die
per package, the IRF5851 can provide the functionality of
two SOT-23 packages in a smaller footprint. Its unique
thermal design and R
increase in current-handling capability.
reduction enables an
DS(on)
G1
S2
G2
N-Ch P-Ch
1
2
3
D1
6
V
S1
5
D2
4
R
DS(on)
TSOP-6
20V -20V
DSS
0.090Ω 0.135Ω
Absolute Maximum Ratings
Parameter
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.7 -2.2
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.2 -1.7
I
DM
PD @TA = 25°C Power Dissipation 0.96 W
PD @TA = 70°C Power Dissipation 0.62
V
GS
T
J, TSTG
Drain-to-Source Voltage 20 -20
Pulsed Drain Current 11 -9.0
Linear Derating Factor 7.7 mW/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range °C
N-Channel P-Channel
Max.
-55 to + 150
Units
A
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient ––– 130 °C/W
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2/26/02
IRF5851
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
/∆TJBreakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ± 12V
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter Min. Typ. Max. Units Conditions
N-Ch 20 —— VGS = 0V, ID = 250µA
P-Ch -20 —— V
N-Ch — 0.016 — Reference to 25°C, I
P-Ch — -0.011 — Reference to 25°C, I
——0.090 VGS = 4.5V, ID = 2.7A
N-Ch
——0.120 V
——0.135 V
P-Ch
——0.220 V
N-Ch 0.60 — 1.25 V
P-Ch -0.45 — -1.2 VDS = VGS, ID = -250µA
N-Ch 5.2 —— VDS = 10V, ID = 2.7A
P-Ch 3.5 —— V
N-Ch ——1.0 VDS = 16 V , VGS = 0V
P-Ch ——-1.0 VDS = -16V, VGS = 0V
N-Ch ——25 V
P-Ch ——-25 VDS = -16V, VGS = 0V, TJ = 70°C
N-Ch — 4.0 6.0
P-Ch — 3.6 5.4
N-Ch — 0.95 —
P-Ch — 0.66 —
N-Ch — 0.83 —
P-Ch — 5.7 —
N-Ch — 6.6 —
P-Ch — 8.3 —
N-Ch — 1.2 —
P-Ch — 14 —
N-Ch — 15 —
P-Ch — 31 —
N-Ch — 2.4 —
P-Ch — 28 —
N-Ch — 400 —
P-Ch — 320 —
N-Ch — 48 —
P-Ch — 56 —
N-Ch — 32 —
P-Ch — 40 —
V
= 0V, ID = -250µA
GS
V/°C
= 2.5V, ID = 2.2A
GS
Ω
= -4.5V, ID = -2.2A
GS
= -2.5V, ID = -1.7A
GS
= VGS, ID = 250µA
DS
V
S
= -10V, ID = -2.2A
DS
µA
= 16 V , VGS = 0V, TJ = 70°C
DS
N-Channel
= 2.7A, VDS = 10V, VGS = 4.5V
I
D
nC
P-Channel
ID = -2.2A, VDS = -10V, VGS = -4.5V
N-Channel
= 10V, ID = 1.0A, RG = 6.2Ω,
V
DD
VGS = 4.5V
ns
P-Channel
VDD = -10V, ID = -1.0A, RG = 6.0Ω,
VGS = -4.5V
N-Channel
= 0V, VDS = 15V, ƒ = 1.0MHz
V
GS
pF
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
= 1mA
D
= -1mA
D
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 & 26 )
Pulse width ≤ 400µs; duty cycle ≤ 2%.
N-Ch ——0.96
P-Ch ——-0.96
N-Ch ——11
A
P-Ch ——-9.0
N-Ch ——1.2 T
P-Ch ——-1.2 TJ = 25°C, IS = -0.96A, VGS = 0V
N-Ch — 25 38
P-Ch — 23 35
N-Ch — 6.5 9.8
P-Ch — 7.7 12
= 25°C, IS = 0.96A, VGS = 0V
J
V
N-Channel
ns
T
= 25°C, IF = 0.96A, di/dt = 100A/µs
J
P-Channel
nC
T
= 25°C, IF = -0.96A, di/dt = -100A/µs
J
Surface mounted on FR-4 board, t ≤ 10sec.
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N-Channel
IRF5851
100
10
1
TOP
BOTTOM
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
1.5V
1.50V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics
100
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM
1.5V
1.50V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Sou rce Voltage (V)
DS
°
Fig 2. Typical Output Characteristics
2.0
I =
D
2.7A
°
T = 25 C
10
1
D
I , Drain-to-Source Current (A)
0.1
1.5 2.0 2.5 3.0
V , Gate-to-Source Voltage (V)
GS
J
T = 150 C
J
V = 15V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
4.5V
Vs. Temperature
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IRF5851
N-Channel
600
500
400
300
200
C, Capacitance (pF)
100
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
iss
C
oss
C
rss
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
I =
2.7A
D
8
6
4
2
GS
V , Gate-to-Source Voltage (V)
0
0 2 4 6 8
Q , Total Gate Charge (nC)
G
V = 16V
DS
V = 10V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS ARE A LIMITED
BY R
DS(on)
10
°
T = 150 C
J
1
°
SD
I , Reverse Drain Current (A)
0.1
0.4 0.6 0.8 1.0 1.2 1.4
V ,Source-to-Drain Voltage (V)
SD
T = 25 C
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
100us
1
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
Single Pulse
0.1
0.1 1 10 100
°
J
V , Drain-to-Sou rce Voltage (V)
DS
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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N-Channel
IRF5851
3.0
2.5
2.0
1.5
1.0
D
I , Drain Current (A)
0.5
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
R
D.U.T.
D
+
V
DD
-
V
DS
V
GS
R
G
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
°
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
100
thJA
D = 0.50
0.20
0.10
10
0.05
P
1 2
DM
t
1
t
2
0.02
0.01
1
Thermal R esponse (Z )
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Durati on (sec)
1
J DM thJA A
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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