International Rectifier IRF5810 Datasheet

l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge

Description

These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.

PD -94198

IRF5810

HEXFET® Power MOSFET

V

DSS

R

DS(on)

max (m

-20V 90@VGS = -4.5V -2.9A

135@VGS = -2.5V -2.3A

Ω)Ω)

Ω) I

Ω)Ω)

D

This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5810 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and R
reduction enables an increase in current-handling
capability.

DS(on)

TSOP-6

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -2.9
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -2.3 A
I

DM

PD @TA = 25°C Power Dissipation  0.96
PD @TA = 70°C Power Dissipation  0.62

V

GS

T

J, TSTG

Drain- Source Voltage -20 V

Pulsed Drain Current  -11

Linear Derating Factor 0.008 mW/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C

W

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 130 °C/W

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IRF5810

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.011 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– 60 90 VGS = -4.5V, ID = -2.9 
––– 87 135 VGS = -2.5V, ID = -2.3A 

mΩ

Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA
Forward Transconductance 5.4 ––– ––– S VDS = -10V, ID = -2.9A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V

––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 6.4 9.6 ID = -2.9A
Gate-to-Source Charge ––– 1.2 1.8 nC VDS = -10V
Gate-to-Drain ("Miller") Charge ––– 1.7 2.6 VGS = -4.5V
Turn-On Delay Time ––– 8.2 ––– VDD = -10V 
Rise Time ––– 14 ––– ID = -1.0A
Turn-Off Delay Time ––– 62 ––– RG = 6.0Ω

ns

Fall Time ––– 53 ––– VGS = -4.5V
Input Capacitance ––– 650 – –– VGS = 0V
Output Capacitance ––– 110 ––– pF VDS = -16V
Reverse Transfer Capacitance ––– 86 ––– ƒ = 1kHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

–––

–––

–––

–––

-1.0

-11

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V 
Reverse Recovery Time ––– 110 170 ns TJ = 25°C, IF = -1.0A
Reverse Recovery Charge ––– 130 200 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

 Surface mounted on 1 in square Cu board

max. junction temperature.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

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D

S

IRF5810

100

10

1

0.1

D

-I , Drain-to-Source Current (A)

0.01

0.1 1 10 100

VGS

TOP

-10V

-7.0V

-4.5V

-3.0V

-2.5V

-1.8V

-1.5V

BOTTOM

-1.2V

-1.2V

20µs PULSE WIDTH
T = 25 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 1. Typical Output Characteristics

100.0

)

(Α

10.0

TJ = 25°C

TJ = 150°C

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

VGS

TOP

-10V

-7.0V

-4.5V

-3.0V

-2.5V

-1.8V

-1.5V

BOTTOM

-1.2V

-1.2V

20µs PULSE WIDTH

-V , Drain-to-Source Voltage (V)

DS

°

T = 150 C

J

Fig 2. Typical Output Characteristics

2.0

1.5

1.0

-2.9A

I =

D

1.0

, Drain-to-Source Current

D

-I

0.1

1.0 1.5 2.0 2.5 3.0

-VGS, Gate-to-Source Voltage (V)

V

= -15V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature( C)

J

Fig 4. Normalized On-Resistance

V =

-4.5V

GS

°

Vs. Temperature

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