International Rectifier IRF5805 Datasheet

l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge

PD -94029

IRF5805

HEXFET® Power MOSFET

V

DSS

-30V 0.098@VGS = -10V -3.8A

R

max I

DS(on)

D

0.165@VGS = -4.5V -3.0A

Description

These P-channel MOSFETs from International Rectifier

1

D

A

6

D

utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.

The TSOP-6 package with its customized leadframe
produces a HEXFET

®

power MOSFET with R

DS(on)

D

G

2

3

Top V iew

5

D

4

S

TSOP-6

60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R

DS(on)

reduction enables a current-handling increase of nearly
300% compared to the SOT-23.

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.8
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -3.0 A
I

DM

PD @TA = 25°C Maximum Power Dissipation 2W
P

= 70°C Maximum Power Dissipation 1.28 W

D @TA

Linear Derating Factor 0.02 W/°C

V

GS

TJ , T

STG

Drain-Source Voltage -30 V

Pulsed Drain Current -15

Gate-to-Source Voltage ± 20 V

Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 62.5 °C/W

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11/6/00

IRF5805

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -30 –– – –– – V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.098 VGS = -10V, ID = -3.8A 
––– ––– 0.165 VGS = -4.5V, ID = -3.0A 

Ω

Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA
Forward Transconductance 3.5 ––– ––– S VDS = -10V, ID = -3.8A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

––– ––– -15 VDS = -24V, VGS = 0V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 11 17 ID = -3.8A
Gate-to-Source Charge ––– 2.3 ––– nC VDS = -15V
Gate-to-Drain ("Miller") Charge ––– 1.5 ––– VGS = -10V
Turn-On Delay Time ––– 11 17 VDD = -15V, VGS = -10V
Rise Time ––– 14 21 ID = -1.0A
Turn-Off Delay Time ––– 90 1 35 RG = 6.0Ω

ns

Fall Time ––– 49 74 RD = 15Ω 
Input Capacitance ––– 511 ––– VGS = 0V
Output Capacitance ––– 79 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 50 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

––– –––

–––

–––

-2.0

-15

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V 
Reverse Recovery Time ––– 19 29 ns TJ = 25°C, IF = -2.0A
Reverse Recovery Charge ––– 16 24 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

 Surface mounted on 1 in square Cu board, t ≤ 10sec.

max. junction temperature.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

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D

S

IRF5805

100

10

1

0.1

, Drain-to-Source Current (A)

D

-I

-2.5V
20µs PULSE WIDTH

Tj = 25°C

0.01

0.1 1 10 100

-VDS , Drain-to-Source Voltage (V)

100

VGS

TOP -10.0V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V
BOTTOM -2.5V

100

10

1

-2.5V

0.1

, Drain-to-Source Current (A)

D

-I

20µs PULSE WIDTH
Tj = 150°C

0.01

0.1 1 10 100

-VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

-3.8A

I =

D

VGS

TOP -10.0V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V
BOTTOM -2.5V

1.5

10

T = 150 C

1

D

-I , Drain-to-Source Current (A)

0.1

2.0 3.0 4.0 5.0 6.0

°

J

°

T = 25 C

J

V = -15V

DS

20µs PULSE WIDTH

-V , Gate-to-Source Voltage (V)

GS

Fig 3. Typical Transfer Characteristics

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

-10V

Vs. Temperature

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