International Rectifier IRF5804 Datasheet

PD - 94333

IRF5804

HEXFET® Power MOSFET

l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge

Description

These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.

The TSOP-6 package with its customized leadframe
produces a HEXFET
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.

®

power MOSFET with R

DS(on)

DS(on)

V

DSS

R

DS(on)

max (m

Ω)Ω)

Ω) I

Ω)Ω)

-40V 198@VGS = -10V -2.5A
334@VGS = -4.5V -2.0A

D

D

G

1

2

3

Top V iew

A

6

D

5

D

4

S

TSOP-6

D

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -2.5
ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -2.0 A
I

DM

PD @TA = 25°C Power Dissipation  2.0
PD @TA = 70°C Power Dissipation  1.3

V

GS

T

J, TSTG

Drain- Source Voltage -40 V

Pulsed Drain Current  -10

W

Linear Derating Factor 0.016 mW/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 62.5 °C/W

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10/04/01

IRF5804

FOR REVIEW ONLY

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -40 ––– ––– VVGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– ––– 198 VGS = -10V, ID = -2.5 
––– ––– 334 V

mΩ

= -4.5V, ID = -2.0A 

GS

Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, ID = -250µA
Forward Transconductance 2.5 ––– ––– SVDS = -10V, ID = -2.5A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

––– ––– -10 VDS = -32V, VGS = 0V
––– ––– -25 VDS = -32V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 5.7 8.5 ID = -2.5A
Gate-to-Source Charge ––– 2.8 4.2 nC VDS = -20V
Gate-to-Drain ("Miller") Charge ––– 2.1 3.2 VGS = -10V
Turn-On Delay Time ––– 19 ––– VDD = -20V 
Rise Time ––– 430 ––– ID = -1.0A
Turn-Off Delay Time ––– 100 ––– RG = 6.0Ω

ns

Fall Time ––– 64 ––– VGS = -10V
Input Capacitance ––– 680 ––– VGS = 0V
Output Capacitance ––– 60 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 44 ––– ƒ = 1kHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

–––

–––

–––

–––

-2.5

-10

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V 
Reverse Recovery Time ––– 24 36 ns TJ = 25°C, IF = -2.0A
Reverse Recovery Charge ––– 32 49 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

 Surface mounted on 1 in square Cu board

max. junction temperature.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

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D

S

FOR REVIEW ONLY

IRF5804

100

10

1

0.1

, Drain-to-Source Current (A)

D

-I

VGS

TOP -10V

-7.0V

-5.0V

-4.5V

-4.0V

-3.7V

-3.5V
BOTTOM -3.0V

-3.0V

20µs PULSE WIDTH
Tj = 25°C

0.01

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

10.00

)

(Α

TJ = 150°C

100

10

1

, Drain-to-Source Current (A)

D

-I

VGS

TOP -10V

-7.0V

-5.0V

-4.5V

-4.0V

-3.7V

-3.5V
BOTTOM -3.0V

-3.0V
20µs PULSE WIDTH

Tj = 150°C

0.1

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

1.5

-2.5A

I =



D

1.00

1.0

TJ = 25°C

(Normalized)

, Drain-to-Source Current

D

-I

0.10

3.0 3.5 4.0 4.5 5.0

V

= -25V

DS

20µs PULSE WIDTH

-VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

-

V =

-10V



GS

°

Vs. Temperature

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