International Rectifier IRF5803D2 Datasheet
Co-packaged HEXFET Power
l
MOSFET and Schottky Diode
l Ideal For Buck Regulator Applications
l P-Channel HEXFET
l Low V
l SO-8 Footprint
Schottky Rectifier
F
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
PD- 94016
IRF5803D2
FETKY MOSFET & Schottky Diode
A
A
S
G
TM
1
2
3
4
Top View
8
K
V
= -40V
R
DS(on)
DSS
= 112mΩ
7
K
6
D
5
D
Schottky Vf = 0.51V
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.4 A
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -2.7
I
DM
PD @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C Power Dissipation 1.3
V
GS
T
J, TSTG
Pulsed Drain Current ➀ -27
Linear Derating Factor 16 mW/° C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
R
θJA
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
Pulse width ≤ 400µs – duty cycle ≤ 2%
Surface mounted on 1 inch square copper board, t ≤ 10sec.
Junction-to-Drain Lead, MOSFET ––– 20
Junction-to-Ambient , MOSFET ––– 62.5 °C/W
Junction-to-Ambient , SCHOTTKY ––– 62.5
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03/05/01
IRF5803D2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
MOSFET Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Schottky Diode Maximum Ratings
If (av) Max. Average Forward Current 3. 0 50% Duty Cycle. Rectangular Waveform, TA =30°C
I
SM
Schottky Diode Electrical Specifications
Vfm Max. Forward Voltage Drop 0.51 If = 5.0A, Tj = 25°C
Vrrm Max. Working Peak Reverse Voltage 40
Irm Max. Reverse Leakage Current 3.0 mA Vr = 40V Tj = 25°C
Ct Max. Junction Capacitance 405 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
Drain-to-Source Breakdown Voltage -40 ––– ––– VVGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.03 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 112 VGS = -10V, ID = -3.4A
––– ––– 190 V
mΩ
= -4.5V, ID = -2.7A
GS
Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, ID = -250µA
Forward Transconductance 4.0 ––– ––– SVDS = -10V, ID = -3.4A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
––– ––– -10 VDS = -32V, VGS = 0V
––– ––– -25 VDS = -32V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 25 37 ID = -3.4A
Gate-to-Source Charge ––– 4.5 6.8 nC VDS = -20V
Gate-to-Drain ("Miller") Charge ––– 3.5 5.3 VGS = -10V, See Fig. 6 & 14
Turn-On Delay Time ––– 43 65 VDD = -20V
Rise Time ––– 550 825 ID = -1.0A
Turn-Off Delay Time ––– 88 130 RG = 6.0Ω
ns
Fall Time ––– 50 75 VGS = -10V,
Input Capacitance ––– 1110 ––– VGS = 0V
Output Capacitance ––– 93 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 73 ––– ƒ = 100kHz, See Fig. 5
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current(Body Diode) ––– ––– -2.0
Pulsed Source Current (Body Diode) ––– ––– -27
A
Body Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V
Reverse Recovery Time (Body Diode) ––– 27 40 ns TJ = 25°C, IF = -2.0A
Reverse Recovery Charge ––– 34 50 nC di/dt = 100A/µs
Parameter Max. Units Conditions
A
See Fig.21
Max. peak one cycle Non-repetitive 34 0 5µs sine or 3µs Rect. pulse Following any rated
Surge current 70 10ms sine or 6ms Rect. pulse load condition &
A
with Vrrm applied
Parameter Max. Units Conditions
0.63 If = 10A, Tj = 25°C
V
0.44 If = 5.0A, Tj = 125°C
0.59 If = 10A, Tj = 125°C
V
37 Tj = 125°C
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Power Mosfet Characteristics
IRF5803D2
100
10
1
0.1
, Drain-to-Source Current (A)
D
-I
20µs PULSE WIDTH
Tj = 25°C
-2.7V
0.01
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
100
°
T = 25 C
J
VGS
TOP -15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM - 2.7V
100
10
1
-2.7V
0.1
, Drain-to-Source Current (A)
D
-I
20µs PULSE WIDTH
Tj = 125°C
0.01
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
-3.4A
I =
D
VGS
TOP -15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM - 2.7V
1.5
10
T = 150 C
1
D
-I , Drain-to-Source Current (A)
V = -25V
DS
0.1
2.0 3.0 4.0 5.0 6.0 7.0 8.0
-V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
J
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
V =
GS
°
-
-10V
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRF5803D2
Power Mosfet Characteristics
2000
1500
Ciss
1000
C, Capacitance(pF)
500
Coss
Crss
0
1 10 100
-
V
= 0V, f = 100 KHZ
GS
C
= C
iss
SHORTED
C
= C
rss
C
= C
oss
VDS, Drain-to-Source Voltage (V)
gd
ds
+ C
gs
gd
+ Cgd, C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
ds
12
I =
-3.4A
D
10
8
6
4
GS
2
-V , Gate-to-Source Voltage (V)
0
0 5 10 15 20 25 30
Q , Total Gate Charge (nC)
G
V =-32V
DS
V =-20V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
T = 150 C
10
1
SD
-I , Reverse Drain Current (A)
0.1
0.4 0.8 1.2 1.6
-V ,Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
°
J
10
°
T = 25 C
J
100µsec
1
1msec
10msec
V = 0 V
GS
, Drain-to-Source Current (A)
D
-I
TA = 25°C
TJ = 150°C
Single Pulse
0.1
1 10 100
-V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Forward Voltage
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