International Rectifier IRF5803 Datasheet

Parameter Max. Units

V

DS

Drain- Source Voltage -40 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.4
ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -2.7 A
I

DM

Pulsed Drain Current  -27
PD @TA = 25°C Power Dissipation  2.0
PD @TA = 70°C Power Dissipation  1.3

Linear Derating Factor 16 mW/°C
V

GS

Gate-to-Source Voltage ± 20 V
T

J, TSTG

Junction and Storage Temperature Range -55 to + 150 °C

03/05/01

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IRF5803

HEXFET® Power MOSFET

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 62.5 °C/W

Thermal Resistance

Absolute Maximum Ratings

W

V

DSS

R

DS(on)

max (m

Ω)Ω)

Ω)Ω)

Ω) I

D

-40V 112@VGS = -10V -3.4A

190@VGS = -4.5V -2.7A

TSOP-6

These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.

The TSOP-6 package with its customized leadframe
produces a HEXFET

®

power MOSFET with R

DS(on)

60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R

DS(on)

reduction enables a current-handling increase of nearly
300% compared to the SOT-23.

Description

l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge

Top View

1

2

D

G

A

D

D

D

S

3

4

5

6

PD-94015

IRF5803

2 www.irf.com

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage -40 ––– ––– VVGS = 0V, ID = -250µA

∆V

(BR)DSS

/∆T

J

Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = -1mA

––– ––– 112 VGS = -10V, ID = -3.4 
––– ––– 190 V

GS

= -4.5V, ID = -2.7A 

V

GS(th)

Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, ID = -250µA

g

fs

Forward Transconductance 4.0 ––– ––– SVDS = -10V, ID = -3.4A

––– ––– -10 VDS = -32V, VGS = 0V
––– ––– -25 VDS = -32V, VGS = 0V, TJ = 70°C

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

Q

g

Total Gate Charge ––– 25 37 ID = -3.4A

Q

gs

Gate-to-Source Charge ––– 4.5 6.8 nC VDS = -20V

Q

gd

Gate-to-Drain ("Miller") Charge ––– 3.5 5.3 VGS = -10V

t

d(on)

Turn-On Delay Time ––– 43 ––– VDD = -20V 

t

r

Rise Time ––– 550 ––– ID = -1.0A

t

d(off)

Turn-Off Delay Time ––– 88 ––– RG = 6.0Ω

t

f

Fall Time ––– 50 ––– VGS = -10V

C

iss

Input Capacitance ––– 1110 ––– VGS = 0V

C

oss

Output Capacitance ––– 93 ––– pF VDS = -25V

C

rss

Reverse Transfer Capacitance ––– 73 ––– ƒ = 100kHz

Parameter Min. Typ. Max. Units Conditions

I

S

Continuous Source Current MOSFET symbol
(Body Diode) showing the

I

SM

Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

V

SD

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V 

t

rr

Reverse Recovery Time ––– 27 40 ns TJ = 25°C, IF = -2.0A

Q

rr

Reverse Recovery Charge ––– 34 50 nC di/dt = -100A/µs



Source-Drain Ratings and Characteristics

A

-27

–––

–––

–––

-2.0

–––

S

D

G

 Repetitive rating; pulse width limited by

max. junction temperature.

Notes:

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

I

GSS

µA

mΩ

R

DS(on)

Static Drain-to-Source On-Resistance

I

DSS

Drain-to-Source Leakage Current

nA

ns

 Surface mounted on 1 in square Cu board

IRF5803

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

-

0.1

1

10

100

2.0 3.0 4.0 5.0 6.0 7.0 8.0



V = -25V
20µs PULSE WIDTH

DS

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

GS

D



T = 25 C

J

°



T = 150 C

J

°

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°





V =

I =

GS

D

-10V

-3.4A

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

-I

D

, Drain-to-Source Current (A)

-2.7V

20µs PULSE WIDTH
Tj = 25°C

VGS

TOP -15V

-10V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V
BOTTOM - 2.7V

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

-I

D

, Drain-to-Source Current (A)

-2.7V

20µs PULSE WIDTH
Tj = 125°C

VGS

TOP -15V

-10V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V
BOTTOM - 2.7V