International Rectifier IRF5801 Datasheet
SMPS MOSFET
PD-94044
IRF5801
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
V
DSS
R
DS(on)
200V 2.2
max I
ΩΩ
Ω 0.6A
ΩΩ
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
to Simplify Design, (See
OSS
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D
D
G
1
2
3
Top V iew
A
6
D
5
D
4
S
TSOP-6
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 0.6
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 0.48 A
I
DM
PD @TA = 25°C Power Dissipation 2.0 W
V
GS
dv/dt Peak Diode Recovery dv/dt 9.6 V/ns
T
J
T
STG
Pulsed Drain Current 4.8
Linear Derating Factor 0.016 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
D
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJA
Junction-to-Ambient ––– 62.5 °C/W
Notes through are on page 8
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01/17/01
IRF5801
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 26 ––– VGS = 0V, VDS = 0V to 160V
oss
Drain-to-Source Breakdown Voltage 200 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 2.2 Ω VGS = 10V, ID = 0.36A
Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 200V, VGS = 0V
µA
= 30V
GS
nA
V
= -30V
GS
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 0.44 ––– ––– SVDS = 50V, ID = 0.36A
Total Gate Charge ––– 3.9 ––– ID = 0.36A
Gate-to-Source Charge ––– 0.8 ––– nC VDS = 160V
Gate-to-Drain ("Miller") Charge ––– 2.2 ––– VGS = 10V
Turn-On Delay Time ––– 6.5 ––– VDD = 100V
Rise Time ––– 8.0 ––– ID = 0.36A
Turn-Off Delay Time ––– 8.8 ––– RG = 53Ω
ns
Fall Time ––– 19 ––– VGS = 10V
Input Capacitance ––– 88 ––– VGS = 0V
Output Capacitance ––– 18 ––– VDS = 25V
Reverse Transfer Capacitance ––– 6.3 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 102 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 8.4 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 9.9 mJ
Avalanche Current ––– 0.6 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
1.8
4.8
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 0.36A, VGS = 0V
Reverse Recovery Time ––– 45 ––– ns TJ = 25°C, IF = 0.36A
Reverse RecoveryCharge ––– 54 ––– nC di/dt = 100A/µs
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D
S
IRF5801
10
1
VGS
TOP 15.0V
12.0V
10.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
6.0V
0.1
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
10
10
1
0.1
, Drain-to-Source Current (A)
D
I
VGS
TOP 15.0V
12.0V
10.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
20µs PULSE WIDTH
Tj = 150°C
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
0.6A
6.0V
2.5
°
T = 150 C
J
1
°
T = 25 C
J
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
6 7 8 9 10 11 12
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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