International Rectifier IRF5800 Datasheet

PD - 93850

IRF5800

HEXFET® Power MOSFET

l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge

1

D

2

D

3

G

A

6

D

V

= -30V

R

DS(on)

DSS

= 0.085Ω

5

D

4

S

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Description

These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.

The TSOP-6 package with its customized leadframe
produces a HEXFET

®

power MOSFET with R

DS(on)

60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and R
enables a current-handling increase of nearly 300%

DS(on)

reduction

TSOP-6

compared to the SOT-23.

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.0
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -3.2 A
I

DM

PD @TA = 25°C Power Dissipation 2.0
PD @TA = 70°C Power Dissipation 1.3

E

AS

V

GS

T

J, TSTG

Drain- Source Voltage -30 V

Pulsed Drain Current  -32

Linear Derating Factor 0.016 W/°C
Single Pulse Avalanche Energy 20.6 mJ
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C

W

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 62.5 °C/W

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2/8/00

IRF5800

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -30 ––– – –– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.085 VGS = -10V, ID = -4.0A 
––– ––– 0.150 VGS = -4.5V, ID = -3.0A 

Ω

Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance 3.5 ––– ––– S VDS = -10V, ID = -4.0A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

––– ––– -1.0 VDS = -24V, VGS = 0V
––– ––– -5.0 VDS = -24V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 11.4 17 ID = -4.0A
Gate-to-Source Charge ––– 2.3 ––– nC VDS = -16V
Gate-to-Drain ("Miller") Charge ––– 2.2 ––– VGS = -10V 
Turn-On Delay Time ––– 11.4 17 VDD = -15V, VGS = -10V
Rise Time ––– 11 17 ID = -1.0A
Turn-Off Delay Time ––– 24 36 RG = 6.0Ω

ns

Fall Time ––– 14 20 RD = 15Ω, 
Input Capacitance ––– 535 ––– VGS = 0V
Output Capacitance ––– 94 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 68 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

–––

–––

–––

–––

-2.0

-32

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V 
Reverse Recovery Time ––– 19 28 n s TJ = 25°C, IF = -2.0A
Reverse Recovery Charge ––– 16 24 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Surface mounted on FR-4 board, t ≤ 5sec.
 Starting T

RG = 25Ω, I

= 25°C, L = 2.5mH

J

= -4.0A. (See Fig 10 )

AS

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D

S

IRF5800

100

10

1

TOP

BOTTOM

VGS

-15V

-10V

-7.0V

-5.5V

-4.5V

-4.0V

-3.5V

-2.7V

-2.70V

0.1

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

0.01

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

J

Fig 1. Typical Output Characteristics

100

100

10

1

TOP

BOTTOM

VGS

-15V

-10V

-7.0V

-5.5V

-4.5V

-4.0V

-3.5V

-2.7V

-2.70V

0.1

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

0.01

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

T = 150 C

°

J

Fig 2. Typical Output Characteristics

2.0

I =

D

-4.0A

°

T = 25 C

J

1.5

10

1

D

-I , Drain-to-Source Current (A)

V = -15V

DS

0.1

2.0 3.0 4.0 5.0 6.0 7.0 8.0

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

°

T = 150 C

J

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

-10V

Vs. Temperature

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