International Rectifier IRF540NS, IRF540NL Datasheet

PD - 91342

IRF540NS

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated

Description

Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per

HEXFET® Power MOSFET

G

IRF540NL

D

S

V

R

DS(on)

DSS

= 100V

= 44mΩ

ID = 33A

silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on­resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for low­profile applications.

D2Pak

IRF540NS

TO-262

IRF540NL

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  33
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V  23 A
I

DM

PD @TC = 25°C Power Dissipation 130 W

V

GS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  7.0 V/ns
T

J

T

STG

Pulsed Drain Current  110

Linear Derating Factor 0.87 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 16 A
Repetitive Avalanche Energy 13 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

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Junction-to-Case ––– 1.15
Junction-to-Ambient (PCB mount)** ––– 40

°C/W

02/14/02

IRF540NS/IRF540NL

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

E

AS

Drain-to-Source Breakdown Voltage 100 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA 

J

Static Drain-to-Source On-Resistance ––– ––– 44 mΩ VGS = 10V, ID = 16A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 21 ––– ––– SVDS = 50V, ID = 16A

Drain-to-Source Leakage Current

––– ––– 25
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 100V, VGS = 0V

µA

= 20V

GS

nA

VGS = -20V
Total Gate Charge ––– ––– 71 ID = 16A
Gate-to-Source Charge ––– ––– 14 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 11 ––– VDD = 50V
Rise Time ––– 35 ––– ID = 16A
Turn-Off Delay Time ––– 39 ––– RG = 5.1Ω

ns

Fall Time ––– 35 ––– VGS = 10V, See Fig. 10 

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 1960 ––– VGS = 0V
Output Capacitance ––– 250 ––– VDS = 25V
Reverse Transfer Capacitance ––– 40 ––– pF ƒ = 1.0MHz, See Fig. 5 
Single Pulse Avalanche Energy ––– 700 185 mJ I

= 16A, L = 1.5mH

AS

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)

––– –––

––– –––

33

110

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 16A, VGS = 0V 
Reverse Recovery Time ––– 115 170 ns TJ = 25°C, IF = 16A
Reverse Recovery Charge ––– 505 760 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

 Starting T

RG = 25Ω, I

 I

SD

= 25°C, L =1.5mH

J

= 16A. (See Figure 12)

AS

≤ 16A, di/dt ≤ 340A/µs, V

DD

≤ V

(BR)DSS

TJ ≤ 175°C

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 This is a typical value at device destruction and represents

operation outside rated limits.

 This is a calculated value limited to T
 Uses IRF540N data and test conditions.

,

**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994

= 175°C .

J

2 www.irf.com

D

S

IRF540NS/IRF540NL

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

1000

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V



5.0V

BOTTOM

4.5V

4.5V

20µs PULSE WIDTH



T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V



5.0V

BOTTOM

4.5V

20µs PULSE WIDTH



T = 175 C

V , Drain-to-Source Voltage (V)

DS

J

4.5V

°

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

3.5

33A

I =



D

3.0

2.5

°

T = 25 C



100

D

I , Drain-to-Source Current (A)

10

4.0 5.0 6.0 7.0 8.0 9.0

J

°

T = 175 C



J

V = 50V

DS



20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

GS

Fig 3. Typical Transfer Characteristics

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =



10V

GS

°

Vs. Temperature

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