International Rectifier IRF540N Datasheet

PD - 91341B

IRF540N

HEXFET® Power MOSFET

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated

G

D

V

R

DS(on)

DSS

= 100V

= 44mΩ

ID = 33A

S

Description

Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute

TO-220AB

to its wide acceptance throughout the industry.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 33
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 A
I

DM

PD @TC = 25°C Power Dissipation 130 W

V

GS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  7.0 V/ns
T

J

T

STG

Pulsed Drain Current  110

Linear Derating Factor 0.87 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 16 A
Repetitive Avalanche Energy 13 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

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Junction-to-Case ––– 1.15
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62

03/13/01

IRF540N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

E

AS

Drain-to-Source Breakdown Voltage 100 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 44 mΩ VGS = 10V, ID = 16A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 21 ––– ––– SVDS = 50V, ID = 16A

Drain-to-Source Leakage Current

––– ––– 25
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 100V, VGS = 0V

µA

= 20V

GS

nA

VGS = -20V
Total Gate Charge ––– ––– 71 ID = 16A
Gate-to-Source Charge ––– ––– 14 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 11 ––– VDD = 50V
Rise Time ––– 35 ––– ID = 16A
Turn-Off Delay Time ––– 39 ––– RG = 5.1Ω

ns

Fall Time ––– 35 ––– VGS = 10V, See Fig. 10 

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 1960 ––– VGS = 0V
Output Capacitance ––– 250 ––– VDS = 25V
Reverse Transfer Capacitance ––– 40 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 700 185 mJ I

= 16A, L = 1.5mH

AS

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)

––– –––

––– –––

33

110

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 16A, VGS = 0V 
Reverse Recovery Time ––– 115 170 ns TJ = 25°C, IF = 16A
Reverse Recovery Charge ––– 505 760 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 I

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

 Starting T

RG = 25Ω, I

= 25°C, L =1.5mH

J

= 16A. (See Figure 12)

AS

≤ 16A, di/dt ≤ 340A/µs, V

SD

TJ ≤ 175°C

 Pulse width ≤ 400µs; duty cycle ≤ 2%.
 This is a typical value at device destruction and represents

operation outside rated limits.

 This is a calculated value limited to T

DD

≤ V

(BR)DSS

= 175°C .

J

,

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D

S

IRF540N

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

1000

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V



5.0V

BOTTOM

4.5V

4.5V

20µs PULSE WIDTH



T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V



5.0V

BOTTOM

4.5V

20µs PULSE WIDTH



T = 175 C

V , Drain-to-Source Voltage (V)

DS

J

4.5V

°

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

3.5

33A

I =



D

3.0

2.5

°

T = 25 C



100

D

I , Drain-to-Source Current (A)

10

4.0 5.0 6.0 7.0 8.0 9.0

J

°

T = 175 C



J

V = 50V

DS



20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

GS

Fig 3. Typical Transfer Characteristics

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =



10V

GS

°

Vs. Temperature

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