International Rectifier IRF530NS, IRF530NL Datasheet
PD - 91352A
IRF530NS/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRF530NS)
l Low-profile through-hole (IRF530NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
D
V
=100V
DSS
R
S
DS(on)
ID = 17A
= 0.11Ω
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety of applications.
2
The D
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
2
D Pak
TO-262
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF530NL) is available for low-profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 79 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 60
Linear Derating Factor 0.53 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 150 mJ
Avalanche Current•9.0 A
Repetitive Avalanche Energy 7.9 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
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Junction-to-Case ––– 1.9
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
°C/W
5/13/98
IRF530NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
DV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– –– – V VGS = 0V, ID = 250µA
/DT
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.11 Ω VGS = 10V, ID = 9.0A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 6.4 ––– ––– S VDS = 50V, ID = 9.0A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 100V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 44 ID = 9.0A
Gate-to-Source Charge ––– ––– 6.2 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 6.4 ––– VDD = 50V
Rise Time ––– 27 ––– ID = 9.0A
Turn-Off Delay Time ––– 37 ––– RG = 12Ω
ns
Fall Time ––– 25 ––– RD = 5.5Ω, See Fig. 10
Internal Source Inductance
––– –––
7.5
Between lead,
nH
and center of die contact
Input Capacitance ––– 640 ––– VGS = 0V
Output Capacitance ––– 160 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 88 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25W, I
I
SD
TJ ≤ 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
2 www.irf.com
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
17
60
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 9.0A, VGS = 0V
Reverse Recovery Time ––– 130 190 ns TJ = 25°C, IF = 9.0A
Reverse Recovery Charge ––– 650 970 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 25°C, L = 3.1mH
J
= 9.0A. (See Figure 12)
AS
≤ 9.0A, di/dt ≤ 180A/µs, V
DD
≤ V
(BR)DSS
Uses IRF530N data and test conditions
,
G
D
S
IRF530NS/L
)
A
)
A
A
A
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4. 5V
10
4.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 2 5° C
1
0.1 1 10 100
V , Drain -to - S o ur c e Voltage (V
DS
J
Fig 1. Typical Output Characteristics
100
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 175°C
1
0.1 1 10 100
V , Drain -to -S o u r ce Voltage (V
DS
J
Fig 2. Typical Output Characteristics
3.0
I = 15 A
D
2.5
T = 25°C
J
T = 175°C
J
10
D
I , D ra in-to- So u rce C urre n t (A)
1
45678910
V , Gate -to-S o urce Vo ltag e (V)
GS
V = 50V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Norm alized)
1.0
0.5
DS(on)
R , D r ain -to- S ou r c e On R e si s tan c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
V = 10 V
GS
Vs. Temperature
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