International Rectifier IRF530N Datasheet
PD - 91351
IRF530N
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
D
V
R
DS(on)
DSS
= 100V
= 90mΩ
ID = 17A
S
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
TO-220AB
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A
I
DM
PD @TC = 25°C Power Dissipation 70 W
V
GS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 7.4 V/ns
T
J
T
STG
Pulsed Drain Current 60
Linear Derating Factor 0.47 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 9.0 A
Repetitive Avalanche Energy 7.0 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
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Junction-to-Case ––– 2.15
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
3/16/01
IRF530N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance – –– ––– 90 mΩ VGS = 10V, ID = 9.0A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 12 ––– ––– S VDS = 50V, ID = 9.0A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 100V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 37 ID = 9.0A
Gate-to-Source Charge ––– ––– 7.2 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 9.2 ––– VDD = 50V
Rise Time ––– 22 ––– ID = 9.0A
Turn-Off Delay Time ––– 35 ––– RG = 12Ω
ns
Fall Time ––– 25 ––– VGS = 10V, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 920 ––– VGS = 0V
Output Capacitance ––– 130 ––– VDS = 25V
Reverse Transfer Capacitance ––– 19 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 340 93 mJ I
= 9.0A, L = 2.3mH
AS
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
17
60
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 9.0A, VGS = 0V
Reverse Recovery Time ––– 93 140 ns TJ = 25°C, IF = 9.0A
Reverse Recovery Charge ––– 320 480 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 2.3mH
J
= 9.0A, VGS=10V (See Figure 12)
AS
≤ 9.0A, di/dt ≤ 410A/µs, V
DD
≤ V
(BR)DSS
,
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
= 175°C .
J
TJ ≤ 175°C
2 www.irf.com
D
S
IRF530N
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
4.5V
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.5
15A
I =
D
3.0
°
T = 25 C
J
T = 175 C
J
D
I , Drain-to-Source Current (A)
V = 50V
DS
10
4.0 5.0 6.0 7.0 8.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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