International Rectifier IRF5305S, IRF5305L Datasheet
PD - 91386C
IRF5305S/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRF5305S)
l Low-profile through-hole (IRF5305L)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
2
Pak is a surface mount power package capable of
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF5305L) is available for lowprofile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -31
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -22 A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 110 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.8 V/ns
T
J
T
STG
Pulsed Drain Current -110
Linear Derating Factor 0.71 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 280 mJ
Avalanche Current -16 A
Repetitive Avalanche Energy 11 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 1.4
Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40
2
D Pak
D
V
R
DS(on)
DSS
= -55V
= 0.06Ω
ID = -31A
S
TO-262
°C/W
°C
4/1/99
IRF5305S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.034 –– – V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.06 Ω VGS = -10V, ID = -16A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 8.0 ––– ––– S VDS = -25V, ID = -16A
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 63 ID = -16A
Gate-to-Source Charge ––– ––– 13 nC VDS = -44V
Gate-to-Drain ("Miller") Charge ––– ––– 29 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = -28V
Rise Time ––– 66 ––– ID = -16A
Turn-Off Delay Time ––– 39 ––– RG = 6.8Ω
ns
Fall Time ––– 63 ––– RD = 1.6Ω, See Fig. 10
Internal Source Inductance
––– –––
7.5
Between lead,
nH
and center of die contact
Input Capacitance ––– 1200 ––– VGS = 0V
Output Capacitance ––– 520 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
-31
-110
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– -1.3 V TJ = 25°C, IS = -16A, VGS = 0V
Reverse Recovery Time ––– 71 110 n s TJ = 25°C, IF = -16A
Reverse Recovery Charge ––– 170 250 nC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
V
= -25V, Starting TJ = 25°C, L = 2.1mH
DD
RG = 25Ω, I
I
≤ -16A, di/dt ≤ -280A/µs, V
SD
= -16A. (See Figure 12)
AS
DD
≤ V
(BR)DSS
Uses IRF5305 data and test conditions
,
TJ ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2 www.irf.com
D
S
IRF5305S/L
A
A
)
A
)
A
1000
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
100
10
D
-I , Drain -to-S ou rce C urre nt (A )
-4.5V
20µs PULSE WIDTH
TJ = 25°C
T = 25 °C
1
0.1 1 10 100
-V , Drain-to-S ource Voltage (V)
DS
c
Fig 1. Typical Output Characteristics
100
1000
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
100
10
D
-I , Drain -to-S ou rce C urren t (A )
-4.5 V
20µs PULSE W IDTH
TJ = 175°C
T = 175°C
1
0.1 1 10 10 0
-V , Dra in-t o- S o u rc e Voltage (V
DS
C
Fig 2. Typical Output Characteristics
2.0
I = - 2 7 A
D
T = 25°C
10
J
T = 175°C
J
1.5
1.0
(Norm alized)
0.5
D
-I , D rain- to-S ou rc e C u rre nt (A )
1
45678910
-V , Gate -to-S ou rce V oltage (V
GS
V = -25 V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
DS(on)
R , Dra in -to -S o u rc e On R e s is tan c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , J unc tion T empe rature ( °C )
J
Fig 4. Normalized On-Resistance
V = -1 0V
GS
Vs. Temperature
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