International Rectifier IRF5305 Datasheet
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
PD - 91385B
IRF5305
HEXFET® Power MOSFET
D
S
V
R
DS(on)
TO-220AB
= -55V
DSS
= 0.06Ω
ID = -31A
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -31
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -22 A
I
DM
PD @TC = 25°C Power Dissipation 110 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
T
STG
Pulsed Drain Current -110
Linear Derating Factor 0.71 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 280 mJ
Avalanche Current -16 A
Repetitive Avalanche Energy 11 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 1.4
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
°C
3/3/00
IRF5305
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -55 ––– –– – V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.034 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.06 Ω VGS = -10V, ID = -16A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 8.0 ––– ––– S VDS = -25V, ID = -16A
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 63 ID = -16A
Gate-to-Source Charge ––– ––– 13 nC VDS = -44V
Gate-to-Drain ("Miller") Charge ––– ––– 29 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = -28V
Rise Time ––– 66 ––– ID = -16A
Turn-Off Delay Time ––– 39 ––– RG = 6.8Ω
ns
Fall Time ––– 63 ––– RD = 1.6Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1200 ––– VGS = 0V
Output Capacitance ––– 520 – –– pF VDS = -25V
Reverse Transfer Capacitance –– – 250 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
-31
-110
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– -1.3 V TJ = 25°C, IS = -16A, VGS = 0V
Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = -16A
Reverse RecoveryCharge ––– 170 250 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= -25V, starting TJ = 25°C, L = 2.1mH
DD
RG = 25Ω, I
= -16A. (See Figure 12)
AS
I
≤ -16A, di/dt ≤ -280A/µs, V
SD
DD
≤ V
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
(BR)DSS
,
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D
S
IRF5305
A
A
)
A
)
A
1000
VGS
TO P - 15 V
- 10V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
BOT TO M - 4.5V
100
10
D
-I , Dra in-to-Sou rc e Curre n t (A )
-4.5 V
20µs PULSE WIDTH
T = 2 5°C
J
1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
c
Fig 1. Typical Output Characteristics
100
1000
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
100
10
D
-I , Drain -to-S ou rce C urren t (A )
-4.5 V
20µs PULSE W IDTH
T = 175°C
J
1
0.1 1 10 100
-V , Dra in- to -S o u rc e Vo ltage (V
DS
C
Fig 2. Typical Output Characteristics
2.0
I = -27 A
D
T = 25°C
10
J
T = 175°C
J
1.5
1.0
(N orma l i z ed)
0.5
D
-I , D rain- to-S ou rc e C u rre nt (A)
1
45678910
-V , Gate -to-S ou rce V oltage (V
GS
V = -25 V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
DS (on)
R , D ra in-to -S o u rc e O n R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
V = - 10 V
GS
Vs. Temperature
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