International Rectifier IRF5210S Datasheet
l Advanced Process Technology
l Surface Mount (IRF5210S)
l Low-profile through-hole (IRF5210L)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
2
Pak is a surface mount power package capable of
The D
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF5210L) is available for lowprofile applications.
2
Pak is suitable
PD - 91405C
IRF5210S/L
HEXFET® Power MOSFET
D
G
S
2
D Pak
V
DSS
R
DS(on)
ID = -40A
TO-262
= -100V
= 0.06Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -40
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -29 A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 200 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
T
STG
Pulsed Drain Current -140
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 780 mJ
Avalanche Current -21 A
Repetitive Avalanche Energy 20 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 0.75
Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40
°C/W
°C
5/13/98
IRF5210S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.06 Ω VGS = -10V, ID = -24A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 10 ––– ––– S VDS = -50V, ID = -21A
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -100V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 180 ID = -21A
Gate-to-Source Charge ––– ––– 25 nC VDS = -80V
Gate-to-Drain ("Miller") Charge ––– ––– 97 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 17 ––– VDD = -50V
Rise Time ––– 86 ––– ID = -21A
Turn-Off Delay Time ––– 79 ––– RG = 2.5Ω
ns
Fall Time ––– 81 ––– RD = 2.4Ω, See Fig. 10
Internal Source Inductance
––– –––
7.5
Between lead,
nH
and center of die contact
Input Capacitance ––– 2700 ––– VGS = 0V
Output Capacitance ––– 790 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 450 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
TJ ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
-40
-140
showing the
A
p-n junction diode.
Diode Forward Voltage ––– –– – -1.6 V TJ = 25°C, IS = -24A, VGS = 0V
Reverse Recovery Time ––– 170 260 ns TJ = 25°C, IF = -21A
Reverse Recovery Charge ––– 1.2 1.8 µC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 25°C, L = 3.1mH
J
= -21A. (See Figure 12)
AS
≤ -21A, di/dt ≤ -480A/µs, V
SD
DD
≤ V
(BR)DSS
Uses IRF5210 data and test conditions
,
D
G
S
IRF5210S/L
A
A
)
A
A
1000
VGS
TO P - 15 V
- 10V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
BOT TO M - 4.5V
100
10
D
-I , Dra in-to-Sou rc e C u rre nt (A )
-4.5 V
40µs PULSE WIDTH
T = 2 5°C
1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
c
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
100
10
D
-I , Drain-to-Source Current (A )
-4. 5V
40µs PULSE WIDTH
T = 175°C
1
0.1 1 10 10 0
-V , Dra in-t o- S o u rc e Voltage (V
DS
C
Fig 2. Typical Output Characteristics
3.0
I = - 3 5 A
D
100
10
D
-I , Drain-to-Source C urrent (A)
1
45678910
-V , Ga te-to- So urc e V o ltage (V)
GS
T = 25°C
J
T = 175°C
J
V = -50 V
DS
40µs PULSE W IDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(No rm ali zed )
1.0
0.5
DS (on)
R , D r a in-to -S o u rc e O n R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , J unc tion T empe rature ( °C )
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V = - 10 V
GS
Loading...