International Rectifier IRF5210 Datasheet
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
PD - 91434A
IRF5210
HEXFET® Power MOSFET
D
S
V
R
DS(on)
TO-220AB
= -100V
DSS
= 0.06Ω
ID = -40A
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -40
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -29 A
I
DM
PD @TC = 25°C Power Dissipation 200 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
T
STG
Pulsed Drain Current -140
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 780 mJ
Avalanche Current -21 A
Repetitive Avalanche Energy 20 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.75
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
°C
5/13/98
IRF5210
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.06 Ω VGS = -10V, ID = -24A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 10 ––– ––– S VDS = -50V, ID = -21A
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -100V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 180 ID = -21A
Gate-to-Source Charge ––– ––– 25 nC VDS = -80V
Gate-to-Drain ("Miller") Charge ––– ––– 97 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 17 ––– VDD = -50V
Rise Time ––– 86 ––– ID = -21A
Turn-Off Delay Time ––– 79 ––– RG = 2.5Ω
ns
Fall Time ––– 81 ––– RD = 2.4Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 2700 ––– VGS = 0V
Output Capacitance ––– 790 –– – pF VDS = -25V
Reverse Transfer Capacitance ––– 450 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -21A, VGS = 0V
Reverse Recovery Time ––– 170 260 ns TJ = 25°C, IF = -21A
Reverse RecoveryCharge ––– 1.2 1.8 µC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
SD
TJ ≤ 175°C
= -25V, starting TJ = 25°C, L = 3.5mH
= -21A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
-40
A
-140
≤ -21A, di/dt ≤ -480A/µs, V
showing the
p-n junction diode.
DD
≤ V
(BR)DSS
,
D
G
S
IRF5210
A
A
)
A
A
1000
VGS
TO P - 15 V
- 10V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
BOT TOM - 4.5V
100
10
D
-I , Dra in-to-Source C u rren t (A )
-4.5 V
40µs PULSE WIDTH
T = 2 5°C
1
0.1 1 10 1 00
-V , Drain-to-Source Voltage (V)
DS
c
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
100
10
D
-I , Drain -to-S ou rce C urre nt (A )
-4. 5V
40µs PULSE WIDTH
T = 175°C
1
0.1 1 10 100
-V , Dra in-t o-Sou rc e V o ltage (V
DS
C
Fig 2. Typical Output Characteristics
3.0
I = -35 A
D
100
10
D
-I , Drain-to-S ource C urrent (A )
1
45678910
-V , G a te -to-S ou rc e V o ltage (V)
GS
T = 25°C
J
T = 175°C
J
V = - 5 0V
DS
40µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Norm alized)
1.0
0.5
DS(on)
R , D r ain -to- S ou r c e On R e si s tan c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V = -1 0V
GS
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