International Rectifier IRF520VL, IRF520VS Datasheet
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the
lowest possible on-resistance in any existing surface mount package. The
2
Pak is suitable for high current applications because of its low internal
D
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF520VL) is available for low-profile applications.
PD - 94306
IRF520VS
IRF520VL
HEXFET® Power MOSFET
D
S
D2Pak
IRF520VS
V
R
DS(on)
DSS
= 100V
= 0.165Ω
ID = 9.6A
TO-262
IRF520VL
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.6
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.8 A
I
DM
PD @TC = 25°C Power Dissipation 44 W
V
GS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 7.0 V/ns
T
J
T
STG
Pulsed Drain Current 37
Linear Derating Factor 0.29 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 9.2 A
Repetitive Avalanche Energy 4.4 m J
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
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Junction-to-Case ––– 3.4
Junction-to-Ambient (PCB Mounted, steady state)** ––– 40
°C/W
01/18/02
IRF520VS/IRF520VL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Drain-to-Source Breakdown Voltage 100 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.165 Ω VGS = 10V, ID = 5.5A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 1.9 ––– ––– SVDS = 50V, ID = 5.5A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 100V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 22 ID = 9.2A
Gate-to-Source Charge ––– ––– 5.2 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 7.0 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 6.9 ––– VDD = 50V
Rise Time ––– 23 ––– ID = 9.2A
Turn-Off Delay Time ––– 30 ––– RG = 18Ω
ns
Fall Time ––– 24 ––– VGS = 10V, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 560 ––– VGS = 0V
Output Capacitance ––– 81 ––– VDS = 25V
Reverse Transfer Capacitance ––– 10 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 150 44 mJ I
= 9.2A, L = 1.0mH
AS
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
9.6
37
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 9.2A, VGS = 0V
Reverse Recovery Time ––– 83 120 ns TJ = 25°C, IF = 9.2A
Reverse Recovery Charge ––– 220 330 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 1.0mH
J
= 9.2A, VGS=10V (See Figure 12)
AS
≤ 9.2A, di/dt ≤ 360A/µs, V
DD
≤ V
(BR)DSS
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
,
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
= 175°C .
J
Uses IRF520V data and test conditions.
**When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994
2 www.irf.com
D
S
IRF520VS/IRF520VL
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
T = 25 C
J
°
100
10
D
I , Drain-to-Source Current (A)
1
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
1 10 100
V , Drain-to-Source Voltage (V)
DS
°
T = 175 C
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.5
3.0
9.2A
I =
D
2.5
°
T = 175 C
J
2.0
10
1.5
(Normalized)
1.0
D
I , Drain-to-Source Current (A)
V = 50V
DS
1
4.0 5.0 6.0 7.0 8.0 9.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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