International Rectifier IRF520NS, IRF520NL Datasheet

IRF520NS/L

HEXFET® Power MOSFET

PD -91340A

Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF520NL) is available for low-profile applications.

S

D

G

Description

5/13/98

Parameter Typ. Max. Units

R

θJC

Junction-to-Case ––– 3.1

R

θJA

Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40

Thermal Resistance

°C/W

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.7
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.8 A
I

DM

Pulsed Drain Current  38
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 48 W

Linear Derating Factor 0.32 W/°C
V

GS

Gate-to-Source Voltage ± 20 V
E

AS

Single Pulse Avalanche Energy 91 mJ
I

AR

Avalanche Current 5.7 A
E

AR

Repetitive Avalanche Energy 4.8 m J
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J

Operating Junction and -55 to + 175
T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Absolute Maximum Ratings

l Advanced Process Technology
l Surface Mount (IRF520NS)
l Low-profile through-hole (IRF520NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated

2

D Pak

TO-262

V

DSS

= 100V

R

DS(on)

= 0.20Ω

ID = 9.7A

IRF520NS/L

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA

∆V

(BR)DSS

/∆T

J

Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA

R

DS(on)

Static Drain-to-Source On-Resistance ––– ––– 0.20 Ω VGS = 10V, ID = 5.7A 

V

GS(th)

Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA

g

fs

Forward Transconductance 2.7 ––– ––– S VDS = 25V, ID = 5.7A

––– ––– 25

µA

VDS = 100V, VGS = 0V

––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100

nA

VGS = -20V

Q

g

Total Gate Charge ––– ––– 25 ID = 5.7A

Q

gs

Gate-to-Source Charge ––– ––– 4.8 nC VDS = 80V

Q

gd

Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13 

t

d(on)

Turn-On Delay Time ––– 4.5 ––– VDD = 50V

t

r

Rise Time ––– 23 ––– ID = 5.7A

t

d(off)

Turn-Off Delay Time ––– 32 ––– RG = 22Ω

t

f

Fall Time ––– 23 ––– RD = 8.6Ω, See Fig. 10 

Between lead,

––– –––

and center of die contact

C

iss

Input Capacitance ––– 3 30 ––– VGS = 0V

C

oss

Output Capacitance ––– 92 ––– pF VDS = 25V

C

rss

Reverse Transfer Capacitance ––– 54 ––– ƒ = 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

I

GSS

ns

I

DSS

Drain-to-Source Leakage Current

nH

7.5

L

S

Internal Source Inductance

 V

DD

= 25V, starting TJ = 25°C, L = 4.7mH

RG = 25Ω, I

AS

= 5.7A. (See Figure 12)

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Notes:

** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.

 I

SD

≤ 5.7A, di/dt ≤ 240A/µs, V

DD

≤ V

(BR)DSS

,

TJ ≤ 175°C

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Uses IRF520N data and test conditions

Parameter Min. Typ. Max. Units Conditions

I

S

Continuous Source Current MOSFET symbol
(Body Diode)

––– –––

showing the

I

SM

Pulsed Source Current integral reverse
(Body Diode) 

––– –––

p-n junction diode.

V

SD

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 5.7A, VGS = 0V 

t

rr

Reverse Recovery Time ––– 99 150 ns TJ = 25°C, IF = 5.7A

Q

rr

Reverse RecoveryCharge – –– 390 580 nC di/dt = 100A/µs



Source-Drain Ratings and Characteristics

S

D

G

A

9.7

38

t

on

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

IRF520NS/L

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

1

10

100

0.1 1 10 100

I , D ra in-to - S o urc e C u r ren t (A)

D

V , Dra in-t o-So u rc e V o ltage (V

)

DS

V G S
TO P 1 5V
10 V

8. 0V

7. 0V

6. 0V

5. 5V

5. 0V
BOTTOM 4.5V

20µs PUL SE WIDTH
T = 25°C

C

A

4.5V

1

10

100

0.1 1 10 100

4.5V

I , Drain-to-Source Current (A)

D

V , Dra in-t o-So u rc e V o ltage (V

)

DS

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

20µs PULSE WIDTH
T = 175°C

C

A

1

10

100

45678910

T = 25°C

J

GS

V , Gate -to-S o urce Vo ltag e (V)

D

I , Drain-to- So u rce C urre n t (A)

V = 50V
20µs PULSE WIDTH

DS

T = 175°C

J

A

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

J

T , Junction Temperature (°C )

R , D ra in-to -S o u rc e O n R e s is ta nc e

DS (on)

(N orma li z ed)

V = 10 V

GS

A

I = 9.5 A

D