International Rectifier IRF520N Datasheet
PD - 91339A
IRF520N
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
G
D
V
= 100V
DSS
R
DS(on)
= 0.20Ω
ID = 9.7A
S
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
TO-220AB
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.7
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.8 A
I
DM
PD @TC = 25°C Power Dissipation 48 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 38
Linear Derating Factor 0.32 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 91 mJ
Avalanche Current 5.7 A
Repetitive Avalanche Energy 4.8 m J
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 3.1
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Parameter Typ. Max. Units
5/13/98
IRF520N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 100 ––– –– – V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.20 Ω VGS = 10V, ID = 5.7A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 2.7 ––– ––– S VDS = 50V, ID = 5.7A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 100V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 25 ID = 5.7A
Gate-to-Source Charge ––– ––– 4.8 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 4.5 ––– VDD = 50V
Rise Time ––– 23 ––– ID = 5.7A
Turn-Off Delay Time ––– 32 ––– RG = 22Ω
ns
Fall Time ––– 23 ––– RD = 8.6Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 330 –– – VGS = 0V
Output Capacitance ––– 92 ––– pF VDS = 25V
Reverse Transfer Capacitance –– – 54 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 5.7A, VGS = 0V
Reverse Recovery Time ––– 99 150 ns TJ = 25°C, IF = 5.7A
Reverse RecoveryCharge ––– 390 580 nC di/dt = 100A/µs
I
SD
TJ ≤ 175°C
= 25V, starting TJ = 25°C, L = 4.7mH
= 5.7A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
9.7
A
38
≤ 5.7A, di/dt ≤ 240A/µs, V
showing the
p-n junction diode.
DD
≤ V
(BR)DSS
,
D
G
S
IRF520N
)
A
)
A
A
A
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
D
I , Drain-to-Source Current (A)
4.5V
20µs PULSE WIDTH
T = 2 5° C
1
0.1 1 10 100
V , Drain -to - S o ur c e Voltage (V
DS
C
Fig 1. Typical Output Characteristics
100
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 175°C
1
0.1 1 10 100
V , Drain -to -S o u r ce Vo ltage (V
DS
C
Fig 2. Typical Output Characteristics
3.0
I = 9 . 5A
D
T = 25°C
J
T = 175°C
10
D
I , Dra in-to -S o urc e C u rre nt (A )
1
45678910
V , Gate -to-S o urc e V oltage (V)
GS
J
V = 5 0V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(No rma li z e d )
1.0
0.5
DS (on)
R , D r a in-to -S o u rc e O n R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , J unc tion T emperatur e (°C )
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V = 1 0 V
GS
Loading...