International Rectifier IRF3808 Datasheet
PD - 94291B
IRF3808
AUTOMOTIVE MOSFET
Typical Applications
● Integrated Starter Alternator
● 42 Volts Automotive Electrical Systems
Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
G
Description
Designed specifically for Automotive applications, this Advanced
Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon
area. Additional features of this HEXFET power MOSFET are a 175°C
junction operating temperature, low RθJC, fast switching speed and
improved repetitive avalanche rating. This combination makes the
design an extremely efficient and reliable choice for use in higher
power Automotive electronic systems and a wide variety of other
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 140V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 97V A
I
DM
PD @TC = 25°C Power Dissipation 330 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt S 5.5 V/ns
T
J
T
STG
Pulsed Drain Current Q 550
Linear Derating Factor 2.2 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche EnergyR 430 mJ
Avalanche CurrentQ 82 A
Repetitive Avalanche EnergyW See Fig.12a, 12b, 15, 16 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
HEXFET® Power MOSFET
D
V
= 75V
DSS
R
S
= 0.007Ω
DS(on)
= 140AV
I
D
TO-220AB
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.45
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
HEXFET(R) is a registered trademark of International Rectifier.
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02/06/02
IRF3808
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance U ––– 1140 ––– VGS = 0V, VDS = 0V to 60V
oss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Q Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
R Starting T
RG = 25Ω, I
S I
SD
TJ ≤ 175°C
T Pulse width ≤ 400µs; duty cycle ≤ 2%.
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Drain-to-Source Breakdown Voltage 75 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.086 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– 5.9 7.0 mΩ VGS = 10V, ID = 82A T
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
Forward Transconductance 100 ––– ––– SVDS = 25V, ID = 82A
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 60V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 75V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– 150 220 ID = 82A
Gate-to-Source Charge ––– 31 47 nC VDS = 60V
Gate-to-Drain ("Miller") Charge ––– 50 76 VGS = 10VT
Turn-On Delay Time ––– 16 ––– VDD = 38V
Rise Time ––– 140 ––– ID = 82A
Turn-Off Delay Time ––– 68 ––– RG = 2.5Ω
ns
Fall Time ––– 120 ––– VGS = 10V T
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 5310 ––– VGS = 0V
Output Capacitance ––– 890 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 6010 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 570 ––– VGS = 0V, VDS = 60V, ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) Q
––– –––
––– –––
140V
550
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 82A, VGS = 0VT
Reverse Recovery Time ––– 93 140 ns TJ = 25°C, IF = 82A
Reverse RecoveryCharge ––– 34 0 510 nC di/dt = 100A/µs
T
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
U C
eff. is a fixed capacitance that gives the same charging time
oss
= 25°C, L = 0.130mH
J
= 82A. (See Figure 12).
AS
≤ 82A, di/dt ≤ 310A/µs, V
DD
≤ V
(BR)DSS
as C
VCalculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
,
WLimited by T
oss
while V
is rising from 0 to 80% V
DS
, see Fig.12a, 12b, 15, 16 for typical repetitive
Jmax
DSS
avalanche performance.
G
G
.
D
S
D
S
IRF3808
)
1000
100
10
D
I , Drain-to-Source Current (A)
1
1000.00
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
T = 25 C
J
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
V , Drain-to-Source Voltage (V
DS
4.5V
20µs PULSE WIDTH
T = 175 C
J
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
137A
I =
D
)
(Α
100.00
TJ = 175°C
TJ = 25°C
, Drain-to-Source Current
D
I
10.00
1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0
V
= 15V
DS
20µs PULSE WIDTH
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
V =
10V
GS
°
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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