International Rectifier IRF3711S, IRF3711, IRF3711L Datasheet
SMPS MOSFET
PD- 94062B
IRF3711
IRF3711S
IRF3711L
Applications
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
High Frequency Buck Converters for
V
DSS
20V 6.0mΩ 110A
HEXFET® Power MOSFET
R
DS(on)
max I
D
Server Processor Power Synchronous FET
Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
Benefits
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V V
Fully Characterized Avalanche Voltage
GS
TO-220AB
IRF3711
D2Pak
IRF3711S
TO-262
IRF3711L
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 69 A
I
DM
PD @TC = 25°C Maximum Power Dissipation 120 W
PD @TA = 25°C Maximum Power Dissipation 3.1 W
Linear Derating Factor 0.96 W/°C
TJ , T
STG
Drain-Source Voltage 20 V
Gate-to-Source Voltage ± 20 V
Pulsed Drain Current 440
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case ––– 1.04
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Junction-to-Ambient (PCB mount) ––– 40
Notes through are on page 11
www.irf.com 1
11/15/01
IRF3711/3711S/3711L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
––– 4.7 6.0 VGS = 10V, ID = 15A
––– 6.2 8.5 VGS = 4.5V, ID = 12A
mΩ
Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200
µA
nA
= 16V, VGS = 0V
V
DS
= -16V
V
GS
Forward Transconductance 53 ––– ––– SVDS = 16V, ID = 30A
Total Gate Charge ––– 29 44 ID = 15A
Gate-to-Source Charge ––– 7.3 ––– nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 8.9 ––– VGS = 4.5V
Output Gate Charge ––– 33 ––– VGS = 0V, VDS = 10V
Turn-On Delay Time ––– 12 ––– VDD = 10V
Rise Time ––– 220 ––– ID = 30A
Turn-Off Delay Time ––– 17 ––– RG = 1.8Ω
ns
Fall Time ––– 12 ––– VGS = 4.5V
Input Capacitance ––– 2980 ––– VGS = 0V
Output Capacitance ––– 1770 ––– pF VDS = 10V
Reverse Transfer Capacitance ––– 280 ––– ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 460 mJ
Avalanche Current ––– 30 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
110
440
showing the
A
p-n junction diode.
G
––– 0.88 1.3 V TJ = 25°C, IS = 30A, VGS = 0V
––– 0.82 ––– TJ = 125°C, IS = 30A, VGS = 0V
Reverse Recovery Time ––– 50 75 ns TJ = 25°C, IF = 16A, VR=10V
Reverse Recovery Charge ––– 61 92 nC di/dt = 100A/µs
Reverse Recovery Time ––– 48 72 ns TJ = 125°C, IF = 16A, VR=10V
Reverse Recovery Charge ––– 65 98 nC di/dt = 100A/µs
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D
S
IRF3711/3711S/3711L
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
1000
VGS
TOP
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSEWIDTH
T=25C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
TOP
BOTTOM
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.7V
D
I , Drain-to-Source Current (A)
20µs PULSEWIDTH
°
T = 150 C
10
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
110A
°
T=25C
J
1.5
°
T = 150 C
J
100
1.0
(Normalized)
0.5
D
I , Drain-to-Source Current (A)
V = 25V
DS
10
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRF3711/3711S/3711L
100000
)
F
10000
p
(
e
c
n
a
t
i
c
a
p
a
C
,
1000
C
100
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
iss
C
rss
C
oss
Ciss
Coss
Crss
VDS, Drain-to-Source Volt age (V )
gd
SHORTED
ds
14
I =
30A
GS
V , Gate-to-Source Voltage (V)
D
12
10
8
6
4
2
V = 16V
DS
V = 10V
DS
FOR TEST CIRCUIT
0
0 20 40 60 80
Q ,TotalGateCharge(nC)
G
SEE FIGURE
13
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
)
A
(
t
100
10
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.8 1.4 2.0 2.6
°
T = 150 C
J
°
T=25C
J
V ,Source-to-Drain Voltage (V)
SD
V=0V
GS
Fig 7. Typical Source-Drain Diode
1000
n
e
r
r
u
C
e
c
r
u
100
o
S
-
o
t
-
n
i
a
r
10
D
,
D
I
Tc = 25°C
Tj = 150°C
100µsec
1msec
10msec
Single Pulse
1
1 10 100
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Forward Voltage
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