International Rectifier IRF3710S, IRF3710L Datasheet
PD -91310C
IRF3710S/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRF3710S)
l Low-profile through-hole (IRF3710L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
D
V
R
DS(on)
= 100V
DSS
= 0.025Ω
ID = 57A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
2
Pak is a surface mount power package capable of
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for lowprofile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 57
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40 A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 200 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 180
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 530 mJ
Avalanche Current 28 A
Repetitive Avalanche Energy 20 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 0.75
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
2
D Pak
S
TO-262
°C
°C/W
5/13/98
IRF3710S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.025 Ω VGS = 10V, ID = 28A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 20 – –– ––– S VDS = 25V, ID = 28A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 100V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 190 ID = 28A
Gate-to-Source Charge ––– ––– 26 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 82 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = 50V
Rise Time ––– 59 ––– ID = 28A
Turn-Off Delay Time ––– 58 – –– RG = 2.5Ω
ns
Fall Time ––– 48 ––– RD = 1.7Ω, See Fig. 10
Internal Source Inductance
––– –––
7.5
Between lead,
nH
and center of die contact
Input Capacitance ––– 3000 ––– VGS = 0V
Output Capacitance ––– 640 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 330 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
I
SD
TJ ≤ 175°C
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
57
180
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V
Reverse Recovery Time ––– 210 320 ns TJ = 25°C, IF = 28A
Reverse RecoveryCharge – –– 1.7 2.6 µ C di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 25V, starting TJ = 25°C, L = 1.4mH
= 28A. (See Figure 12)
AS
≤ 28A, di/dt ≤ 460A/µs, V
DD
≤ V
(BR)DSS
Uses IRF3710 data and test conditions
,
D
G
S
IRF3710S/L
)
A
)
A
A
A
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
D
I , Drain-to-Source Current (A)
4.5V
20µs PULSE WIDTH
T = 2 5° C
1
0.1 1 10 100
V , Dra in -to -So urce V o ltage (V
DS
C
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 175°C
1
0.1 1 10 100
V , Dra in-t o- S o u rc e V o ltage (V
DS
C
Fig 2. Typical Output Characteristics
3.0
I = 4 6A
D
2.5
T = 25°C
100
10
D
I , Dra in-to -S o urc e C u rre nt (A )
1
45678910
V , Gate -to-S o urce V oltage (V)
GS
J
T = 175°C
J
V = 50 V
DS
20µs PULSE WIDTH
2.0
1.5
(Norm alized)
1.0
0.5
DS(on)
R , Dr ain -to -S o u rc e O n Re s is tan c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , J unc tion T empe ratur e (°C )
J
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
V = 1 0 V
GS
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