International Rectifier IRF3709S, IRF3709L, IRF3709 Datasheet
SMPS MOSFET
PD - 94071
IRF3709
IRF3709S
IRF3709L
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
V
DSS
30V 9.0mΩ 90A
HEXFET® Power MOSFET
R
DS(on)
max I
D
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V V
l Fully Characterized Avalanche Voltage
GS
TO-220AB
IRF3709
D2Pak
IRF3709S
TO-262
IRF3709L
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 90
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 57 A
I
DM
PD @TC = 25°C Maximum Power Dissipation 120 W
PD @TA = 25°C Maximum Power Dissipation 3.1 W
Linear Derating Factor 0.96 mW/°C
TJ , T
STG
Drain-Source Voltage 30 V
Gate-to-Source Voltage ± 20 V
Pulsed Drain Current 360
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case ––– 1.04
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Junction-to-Ambient (PCB mount) ––– 40
Notes through are on page 11
www.irf.com 1
02/20/01
IRF3709/3709S/3709L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– 6.4 9.0 V
––– 7.4 10.5 VGS = 4.5V, ID = 12A
mΩ
= 10V, ID = 15A
GS
Gate Threshold Voltage 1 .0 ––– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
Gate-to-Source Reverse Leakage ––– ––– -200
µA
nA
V
= 24V, VGS = 0V
DS
= 16V
GS
V
= -16V
GS
Forward Transconductance 53 ––– ––– SVDS = 15V, ID = 30A
Total Gate Charge ––– 27 41 ID = 15A
Gate-to-Source Charge ––– 6.7 ––– nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– 9.7 ––– VGS = 5.0V
Output Gate Charge ––– 22 ––– VGS = 0V, VDS = 10V
Turn-On Delay Time ––– 11 ––– VDD = 15V
Rise Time ––– 171 ––– ID = 30A
Turn-Off Delay Time ––– 21 ––– RG = 1.8Ω
ns
Fall Time ––– 9.2 ––– VGS = 4.5V
Input Capacitance ––– 2672 ––– VGS = 0V
Output Capacitance ––– 1064 ––– pF VDS = 16V
Reverse Transfer Capacitance ––– 109 ––– ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 382 mJ
Avalanche Current ––– 30 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
90
360
showing the
A
p-n junction diode.
G
––– 0.88 1.3 V TJ = 25°C, IS = 30A, VGS = 0V
––– 0.82 ––– TJ = 125°C, IS = 30A, VGS = 0V
Reverse Recovery Time ––– 48 72 ns TJ = 25°C, IF = 30A, VR=15V
Reverse Recovery Charge ––– 46 69 nC di/dt = 100A/µs
Reverse Recovery Time ––– 48 72 ns TJ = 125°C, IF = 30A, VR=15V
Reverse Recovery Charge ––– 52 78 nC di/dt = 100A/µs
2 www.irf.com
D
S
IRF3709/3709S/3709L
1000
100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM
2.7V
2.7V
10
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
1000
J
1000
100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM
2.7V
2.7V
10
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
T = 150 C
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
90A
°
T = 25 C
100
J
°
T = 150 C
J
1.5
1.0
(Normalized)
0.5
D
I , Drain-to-Source Current (A)
V = 15V
DS
10
2.0 3.0 4.0 5.0 6.0 7.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRF3709/3709S/3709L
)
4000
3000
2000
C, Capacitance (pF)
1000
0
1 10 100
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
+ C
C
iss
C
oss
C
rss
C SHORTED
C
C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
6
I =
30A
D
5
4
3
2
GS
1
V , Gate-to-Source Voltage (V)
0
0 5 10 15 20 25 30
Q , Total Gate Charge (nC)
G
V = 24V
DS
V = 15V
DS
V = 6V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on
100
10
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.8 1.4 2.0 2.6
°
T = 150 C
J
°
T = 25 C
J
V ,Source-to-Drain Voltage (V)
SD
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
1000
10us
100
D
I , Drain Current (A)I , Drain Current (A)
10
°
= 25 C
C
T T= 150 C
Single Pulse
1
1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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