International Rectifier IRF3706S, IRF3706L, IRF3706 Datasheet
PD - 93936A
IRF3706
IRF3706SSMPS MOSFET
IRF3706L
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
V
DSS
20V 8.5mΩ 77A
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
and Current
DS(on)
at 4.5V V
GS
TO-220AB
IRF3706
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 77
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 54 A
I
DM
PD @TC = 25°C Maximum Power Dissipation 88 W
PD @TC = 100°C Maximum Power Dissipation 44 W
Linear Derating Factor 0.59 W/°C
TJ , T
STG
Drain-Source Voltage 20 V
Gate-to-Source Voltage ± 12 V
Pulsed Drain Current 280
Junction and Storage Temperature Range -55 to + 175 °C
R
DS(on)
D2Pak
IRF3706S
max I
TO-262
IRF3706L
D
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case ––– 1.7
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Junction-to-Ambient (PCB mount) ––– 40
Notes through are on page 11
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7/5/00
IRF3706/3706S/3706L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max.Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA
––– 6.0 8.5 VGS = 10V, ID = 36A
Static Drain-to-Source On-Resistance
––– 7.3 10.5 mΩ VGS = 4.5V, ID = 28A
––– 11 22 VGS = 2.8V, ID = 18A
Gate Threshold Voltage 0.6 ––– 2.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 16V, VGS = 0V
µA
nA
VGS = -12V
Forward Transconductance 53 ––– ––– S VDS = 16V, ID = 57A
Total Gate Charge ––– 23 35 ID = 28A
Gate-to-Source Charge ––– 8.0 12 nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 5.5 8.3 VGS = 4.5V
Output Gate Charge ––– 16 24 VGS = 0V, VDS = 10V
Turn-On Delay Time ––– 6.8 ––– VDD = 10V
Rise Time ––– 87 ––– ID = 28A
Turn-Off Delay Time ––– 17 –– – RG = 1.8Ω
ns
Fall Time ––– 4.8 ––– VGS = 4.5V
Input Capacitance ––– 2410 ––– VGS = 0V
Output Capacitance ––– 1070 ––– VDS = 10V
Reverse Transfer Capacitance ––– 140 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 220 mJ
Avalanche Current ––– 28 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
––– 0.88 1.3 V TJ = 25°C, IS = 36A, VGS = 0V
––– 0.82 ––– TJ = 125°C, IS = 36A, VGS = 0V
77
280
showing the
A
p-n junction diode.
G
Reverse Recovery Time ––– 45 68 ns TJ = 25°C, IF = 36A, VR=20V
Reverse Recovery Charge ––– 65 98 nC di/dt = 100A/µs
Reverse Recovery Time ––– 49 74 ns TJ = 125°C, IF = 36A, VR=20V
Reverse Recovery Charge ––– 78 120 nC di/dt = 100A/µs
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D
S
IRF3706/3706S/3706L
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
1000
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM
2.5V
2.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM
2.5V
2.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
71A
I =
D
°
T = 25 C
J
T = 175 C
J
100
D
I , Drain-to-Source Current (A)
V = 15V
DS
10
2.5 3.5 4.5 5.5 6.5
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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IRF3706/3706S/3706L
100000
10000
1000
C, Capacitance(pF)
100
10
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
Coss
gs
gd
ds
Ciss
Crss
+ Cgd, C
+ C
gd
iss
C
rss
C
oss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
°
T = 175 C
J
SHORTED
ds
10
I =
28A
D
V = 16V
DS
V = 10V
8
6
4
2
GS
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50
Q , Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
10
1ms
°
T = 25 C
J
1
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.2 0.6 1.0 1.4 1.8
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 175 C
Single Pulse
1
1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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