International Rectifier IRF3704L, IRF3704, IRF3704S Datasheet
SMPS MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
PD - 93888B
IRF3704
IRF3704S
IRF3704L
HEXFET® Power MOSFET
V
DSS
20V 9.0mΩ 77A
R
DS(on)
max I
D
l Very Low R
l Fully Characterized Avalanche Voltage
DS(on)
and Current
TO-220AB
IRF3704
D2Pak
IRF3704S
TO-262
IRF3704L
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 77
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 64 A
I
DM
PD @TC = 25°C Maximum Power Dissipation 87 W
PD @TC = 70°C Maximum Power Dissipation 61 W
Linear Derating Factor 0.59 mW/°C
TJ , T
STG
Drain-Source Voltage 20 V
Gate-to-Source Voltage ± 20 V
Pulsed Drain Current 308
Junction and Storage Temperature Range -55 to + 175 °C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
R
θJA
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Junction-to-Case ––– 1.73
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Junction-to-Ambient (PCB mount)* ––– 40
Notes through are on page 10
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8/22/00
IRF3704/3704S/3704L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA
––– 6.3 9.0 V
––– 9.8 13.5 VGS = 4.5V, ID = 12A
mΩ
= 10V, ID = 15A
GS
Gate Threshold Voltage 1 .0 ––– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 16V, VGS = 0V
µA
= 16V
GS
nA
V
= -16V
GS
Forward Transconductance 42 ––– ––– SVDS = 10V, ID = 57A
Total Gate Charge ––– 19 ––– ID = 28.4A
Gate-to-Source Charge ––– 8.1 ––– nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 6.4 ––– VGS = 4.5V
Output Gate Charge ––– 16 24 VGS = 0V, VDS = 10V
Turn-On Delay Time ––– 8.4 ––– VDD = 10V
Rise Time ––– 98 ––– ID = 28.4A
Turn-Off Delay Time ––– 12 ––– RG = 1.8Ω
ns
Fall Time ––– 5.0 ––– VGS = 4.5V
Input Capacitance ––– 1996 ––– VGS = 0V
Output Capacitance ––– 1085 ––– VDS = 10V
Reverse Transfer Capacitance ––– 155 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 216 mJ
Avalanche Current ––– 71 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
77
308
showing the
A
p-n junction diode.
G
––– 0.88 1.3 V TJ = 25°C, IS = 35.5A, VGS = 0V
––– 0.82 ––– TJ = 125°C, IS = 35.5A, VGS = 0V
Reverse Recovery Time ––– 38 57 ns TJ = 25°C, IF = 35.5A, VR=20V
Reverse Recovery Charge ––– 45 68 nC di/dt = 100A/µs
Reverse Recovery Time ––– 41 62 ns TJ = 125°C, IF = 35.5A, VR=20V
Reverse Recovery Charge ––– 50 75 nC di/dt = 100A/µs
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D
S
IRF3704/3704S/3704L
1000
100
3.5V
10
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 25°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
VGS
TOP 10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
1000
100
3.5V
10
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 175°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
77A
I =
D
VGS
TOP 10.0V
9.00V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
1.5
1.0
100
°
T = 25 C
J
°
T = 175 C
J
(Normalized)
0.5
D
I , Drain-to-Source Current (A)
V = 15V
DS
10
3.0 4.0 5.0 6.0 7.0 8.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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