International Rectifier IRF3703 Datasheet
PD - 93918
SMPS MOSFET
IRF3703
HEXFET® Power MOSFET
Applications
l Synchronous Rectification
l Active ORing
Benefits
l Ultra Low On-Resistance
l Low Gate Impedance to Reduce Switching
Losses
l Fully Avalanche Rated
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 210
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 100 A
I
DM
PD @TC = 25°C Power Dissipation 230 W
PD @TA = 25°C Power Dissipation 3.8
V
GS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J, TSTG
Pulsed Drain Current 1000
Linear Derating Factor 1.5 W/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 175 °C
V
DSS
R
DS(on)
max I
30V 2.8mΩ 210A
TO-220AB
D
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.65
Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W
Junction-to-Ambient ––– 62
Notes through are on page 8
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02/27/01
IRF3703
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 2590 ––– VGS = 0V, VDS = 0V to 24V
oss
Drain-to-Source Breakdown Voltage 30 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
––– 2.3 2.8 V
––– 2.8 3.9 V
mΩ
= 10V, ID = 76A
GS
= 7.0V, ID = 76A
GS
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 24V, VGS = 0V
µA
nA
VGS = -20V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 150 ––– ––– SVDS = 24V, ID = 76A
Total Gate Charge ––– 209 ––– ID = 76A
Gate-to-Source Charge ––– 62 ––– nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– 42 ––– VGS = 10V,
Turn-On Delay Time ––– 18 ––– VDD = 15V, VGS = 10V
Rise Time ––– 123 ––– ID = 76A
Turn-Off Delay Time ––– 53 ––– RG = 1.8Ω
ns
Fall Time ––– 24 ––– VGS = 10V
Input Capacitance ––– 8250 ––– VGS = 0V
Output Capacitance ––– 3000 ––– VDS = 25V
Reverse Transfer Capacitance ––– 290 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 10360 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 3060 ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– 1700 mJ
Avalanche Current ––– 76 A
Repetitive Avalanche Energy ––– 23 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
210
1000
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– 0.8 1.3 V TJ = 25°C, IS = 76A, VGS = 0V
Reverse Recovery Time ––– 80 120 ns TJ = 25°C, IF = 76A, VDS = 16V
Reverse RecoveryCharge ––– 185 275 nC di/dt = 100A/µs
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D
S
IRF3703
10000
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
10000
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output Characteristics
2.5
I =
D
210AA
2.0
°
1000
100
D
I , Drain-to-Source Current (A)
10
4.0 5.0 6.0 7.0 8.0 9.0 10.0
Fig 3. Typical Transfer Characteristics
T = 25 C
J
T = 175 C
J
V = 15V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
1.5
°
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T , Junction Temperature ( C)
J
V =
10V
GS
°
Fig 4. Normalized On-Resistance
Vs. Temperature
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