International Rectifier IRF3515S, IRF3515L Datasheet
PD- 91899B
SMPS MOSFET
IRF3515S
IRF3515L
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
lUninterruptible Power Supply
l High speed power switching
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified (See AN 1001)
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 41
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 29 A
I
DM
PD @TC = 25°C Power Dissipation 200 W
V
GS
dv/dt Peak Diode Recovery dv/dt 4.3 V/ns
T
J
T
STG
Pulsed Drain Current 164
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
V
DSS
R
DS(on)
max I
150V 0.045Ω 41A
D2Pak
IRF3515S
TO-262
IRF3515L
°C
D
Applicable Off Line SMPS Topologies
l Telcom 48V input DC/DC Active Clamp Reset Forward Converter
Notes through are on page 10
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10/28/99
IRF3515S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 280 ––– VGS = 0V, VDS = 0V to 120V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
θJC
R
θJA
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
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Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.21 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.045 Ω VGS = 10V, ID = 25A
Gate Threshold Voltage 3.0 ––– 4.5 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 150V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 15 ––– ––– S VDS = 50V, ID = 25A
Total Gate Charge ––– ––– 107 ID = 25A
Gate-to-Source Charge ––– ––– 23 nC VDS = 120V
Gate-to-Drain ("Miller") Charge ––– ––– 65 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 17 ––– VDD = 75V
Rise Time ––– 120 ––– ID = 25A
Turn-Off Delay Time ––– 34 ––– RG = 2.5Ω
ns
Fall Time ––– 63 ––– RD = 3.0Ω,See Fig. 10
Input Capacitance ––– 2260 ––– VGS = 0V
Output Capacitance ––– 530 ––– VDS = 25V
Reverse Transfer Capacitance ––– 170 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 3330 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 230 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 670 mJ
Avalanche Current ––– 25 A
Repetitive Avalanche Energy ––– 20 mJ
Parameter Typ. Max. Units
Junction-to-Case ––– 0.75 °C/W
Junction-to-Ambient ( PCB Mounted, steady-state)* ––– 40
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V
Reverse Recovery Time ––– 200 300 n s TJ = 25°C, IF = 25A
Reverse RecoveryCharge – –– 1.6 2.4 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
41
164
showing the
A
p-n junction diode.
G
D
S
IRF3515S/L
1000
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
1000
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM
5.0V
5.0V
V , Drain-to-Source Voltage (V)
DS
20µs PULSE WIDTH
T = 25 C
J
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM
5.0V
5.0V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
41A
2.5
100
°
T = 175 C
J
10
°
T = 25 C
D
I , Drain-to-Source Current (A)
1
4 6 8 10 12 14
J
V = 50V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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