International Rectifier IRF350 Datasheet
PD - 90339F
IRF350
REPETITIVE A V ALANCHE AND dv/dt RA TED JANTX2N6768
HEXFETTRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on) ID
IRF350 400V 0.300Ω 14A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
400V, N-CHANNEL
[REF:MIL-PRF-19500/543]
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
JANTXV2N6768
TO-3
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 1 4
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 9. 0
I
DM
PD @ TC = 25°C Max. Power Dissipation 15 0 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 4.0
T
J
T
STG
For footnotes refer to the last page
Pulsed Drain Current ➀ 56
Linear Derating Factor 1 .2 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 11.3 mJ
Avalanche Current ➀ 14 A
Repetitive Avalanche Energy ➀ 15 mJ
Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5 (typical) g
www.irf.com 1
A
V/ns
o
C
01/22/01
IRF350
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
∆BV
R
V
g
I
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
DSS
GSS
GSS
d(on)
r
d(off)
f
DSS
DSS
DS(on)
GS(th)
fs
g
gs
gd
S + LD
iss
oss
rss
Drain-to-Source Breakdown Voltage 40 0 — — V VGS = 0V, ID = 1.0mA
/∆TJTemperature Coefficient of Breakdown — 0.46 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source On-State — — 0.300 VGS = 10V, ID =9.0A➃
Resistance — — 0.400 VGS =10V, ID =14A ➃
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID =250µA
Forward Transconductance 6.0 — — S ( ) VDS > 15V, IDS =9.0A➃
Zero Gate Voltage Drain Current — — 2 5 VDS=320V , VGS=0V
— — 250 VDS =320V
VGS = 0V, TJ = 125°C
Gate-to-Source Leakage Forward — — 10 0 VGS =20V
Gate-to-Source Leakage Reverse — — -100 VGS =-20V
Total Gate Charge 5 2 — 11 0 VGS =10V, ID=14A
Gate-to-Source Charge 5. 0 — 1 8 nC VDS =200V
Gate-to-Drain (‘Miller’) Charge 25 — 6 5
Turn-On Delay Time — — 3 5 VDD =200V, ID =14A,
Rise Time — — 19 0 RG =2.35Ω
Turn-Off Delay Time — — 1 70
Fall Time — — 13 0
Total Inductance — 6 .1 —
Input Capacitance — 2600 VGS = 0V, VDS =25V
Output Capacitance — 68 0 — pF f = 1.0MHz
Reverse Transfer Capacitance — 2 50 —
Ω
Ω
µA
nA
ns
nH
Measured from the center of
drain pad to center of source
pad
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
Continuous Source Current (Body Diode) — — 1 4
S
I
Pulse Source Current (Body Diode) ➀ —— 56
SM
V
Diode Forward Voltage — — 1.7 V Tj = 25°C, IS =14A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 1200 nS Tj = 25°C, IF =14A, di/dt ≤100A/µs
rr
Q
Reverse Recovery Charge — — 2 5 0 µc VDD ≤50V ➃
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
A
S
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
R
thJA
For footnotes refer to the last page
2 www.irf.com
Junction to Case — — 0.83
Junction to Ambient — — 3 0 Typical socket mount
°C/W
+ LD.
IRF350
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com 3
Loading...