International Rectifier IRF3415S, IRF3415L Datasheet

PD - 91509C
IRF3415S/L
HEXFET® Power MOSFET
l Advanced Process Technology l Surface Mount (IRF3415S) l Low-profile through-hole (IRF3415L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
Description
G
D
V
R
DS(on)
= 150V
DSS
= 0.042
ID = 43A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
2
Pak is a surface mount power package capable of
The D accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-
2
D Pak
TO-262
resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3415L) is available for low­profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 43 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A I
DM
PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 200 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns T
J
T
STG
Pulsed Drain Current  150
Linear Derating Factor 1.3 W/°C Gate-to-Source Voltage ± 20 V Single Pulse Avalanche Energy 590 mJ Avalanche Current 22 A Repetitive Avalanche Energy 20 mJ
Operating Junction and -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 0.75 Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40
°C/W
°C
5/13/98
IRF3415S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
/T
Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.042 VGS = 10V, ID = 22A Gate Threshold Voltage 2 .0 ––– 4.0 V VDS = VGS, ID = 250µA Forward Transconductance 19 ––– ––– S VDS = 50V, ID = 22A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 150V, VGS = 0V
µA
nA
VGS = -20V Total Gate Charge ––– ––– 200 ID = 22A Gate-to-Source Charge ––– ––– 17 nC VDS = 120V Gate-to-Drain ("Miller") Charge ––– ––– 98 VGS = 10V, See Fig. 6 and 13  Turn-On Delay Time ––– 12 ––– VDD = 75V Rise Time ––– 55 ––– ID = 22A Turn-Off Delay Time ––– 71 –– – RG = 2.5
ns
Fall Time ––– 69 ––– RD = 3.3Ω, See Fig. 10  Internal Source Inductance
––– –––
7.5
Between lead,
nH
and center of die contact Input Capacitance ––– 2400 ––– VGS = 0V Output Capacitance ––– 640 ––– pF VDS = 25V Reverse Transfer Capacitance ––– 340 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25, I
I
SD
TJ ≤ 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #AN-994.
Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 
––– –––
––– –––
43
150
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 22A, VGS = 0V Reverse Recovery Time ––– 260 390 ns TJ = 25°C, IF = 22A Reverse Recovery Charge ––– 2.2 3.3 µC di/dt = 100A/µs Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width 300µs; duty cycle ≤ 2%.
= 25°C, L = 2.4mH
J
= 22A. (See Figure 12)
AS
22A, di/dt 820A/µs, V
DD
V
(BR)DSS
Uses IRF3415 data and test conditions
,
showing the
A
p-n junction diode.

D
G
S
IRF3415S/L
1000
100
D
I , Drain-to-Source Current (A)
10
1 10 100
VGS
TOP
15V 10V
8.0V
7.0V
6.0V
5.5V
5.5V
4.5V
5.0V
BOTTOM
4.5V
20us PULSE WIDTH T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
o
Fig 1. Typical Output Characteristics
1000
1000
100
TOP
BOTTOM
VGS 15V 10V
8.0V
7.0V
6.0V
5.5V
5.5V
4.5V
5.0V
4.5V
D
I , Drain-to-Source Current (A)
20us PULSE WIDTH
10
1 10 100
V , Drain-to-Source Voltage (V)
DS
T = 175 C
o
J
Fig 2. Typical Output Characteristics
3.0
I =
D
37A
°
T = 25 C
J
100
D
I , Drain-to-Source Current (A)
10
4 5 6 7 8 9 10
V , Gate-to-Source Voltage (V)
GS
T = 175 C
J
V = 50V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
°
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
V =
GS
o
10V
Fig 4. Normalized On-Resistance
Vs. Temperature
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