International Rectifier IRF3315S, IRF3315L Datasheet
PD - 9.1617A
PRELIMINARY
IRF3315S/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRF3315S)
l Low-profile through-hole (IRF3315L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
2
Pak is a surface mount power package capable of
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF3315L) is available for lowprofile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 21
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 15 A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 94 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 2.5 V/ns
T
J
T
STG
Pulsed Drain Current 84
Linear Derating Factor 0.63 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 350 mJ
Avalanche Current 12 A
Repetitive Avalanche Energy 9.4 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
D
S
2
D Pak
V
R
DS(on)
TO-262
= 150V
DSS
= 0.082Ω
ID = 21A
°C
Thermal Resistance
R
θJC
R
θJA
Junction-to-Case ––– 1.6
Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40
Parameter Typ. Max. Units
°C/W
11/7/97
IRF3315S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.187 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.082 Ω VGS = 10V, ID = 12A
Gate Threshold Voltage 2. 0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 17 ––– ––– S VDS = 50V, ID = 12A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 120V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 150V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 95 ID = 12A
Gate-to-Source Charge ––– ––– 11 nC VDS = 120V
Gate-to-Drain ("Miller") Charge ––– ––– 47 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 9.6 ––– VDD = 75V
Rise Time ––– 32 ––– ID = 12A
Turn-Off Delay Time ––– 49 ––– RG = 5.1Ω
ns
Fall Time ––– 38 ––– RD = 5.9Ω, See Fig. 10
Internal Source Inductance
––– –––
7.5
Between lead,
nH
and center of die contact
Input Capacitance ––– 1300 ––– VGS = 0V
Output Capacitance ––– 300 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 160 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
I
SD
TJ ≤ 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
21
84
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 43A, VGS = 0V
Reverse Recovery Time ––– 174 260 n s TJ = 25°C, IF = 43A
Reverse Recovery Charge ––– 1.2 1.7 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 25V, starting TJ = 25°C, L = 4.9 mH
= 12A. (See Figure 12)
AS
≤ 12A, di/dt ≤ 140A/µs, V
DD
≤ V
(BR)DSS
Uses IRF3315 data and test conditions
,
D
G
S
IRF3315S/L
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
100
°
T = 25 C
J
°
T = 175 C
J
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
4.5V
°
Fig 2. Typical Output Characteristics
3.0
2.5
I =
D
21A
10
D
I , Drain-to-Source Current (A)
V = 50V
DS
1
4 5 6 7 8 9 10
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
10V
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