International Rectifier IRF3315 Datasheet
APPROVED
HEXFET® Power MOSFET
PD -91623A
IRF3315
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
G
D
V
= 150V
DSS
R
S
DS(on)
ID = 27A
= 0.07Ω
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the
TO-220AB
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 27
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 19 A
I
DM
PD @TC = 25°C Power Dissipation 136 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 2.5 V/ns
T
J
T
STG
Pulsed Drain Current 108
Linear Derating Factor 0.91 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 350 mJ
Avalanche Current 12 A
Repetitive Avalanche Energy 13.6 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 1.1
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
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12/09/98
IRF3315
APPROVED
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.187 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.07 Ω VGS = 10V, ID = 12A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 11.4 ––– ––– S VDS = 50V, ID = 12A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 120V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 150V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge –– – ––– 95 ID = 12A
Gate-to-Source Charge ––– ––– 11 nC VDS = 120V
Gate-to-Drain ("Miller") Charge ––– ––– 47 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 9.6 ––– VDD = 75V
Rise Time ––– 32 ––– ID = 12A
Turn-Off Delay Time ––– 49 ––– RG = 5.1Ω
ns
Fall Time ––– 38 ––– RD = 5.9Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1300 ––– VGS = 0V
Output Capacitance ––– 300 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 160 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
27
108
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 12A, VGS = 0V
Reverse Recovery Time ––– 174 260 ns TJ = 25°C, IF = 12A
Reverse Recovery Charge ––– 1.2 1.7 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25 Ω, I
= 25°C, L = 4.9mH
J
= 12A. (See Figure 12)
AS
I
≤ 12A, di/dt ≤ 140A/µs, V
SD
DD
≤ V
(BR)DSS
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
,
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D
S
APPROVED
IRF3315
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
BOTTOM
7.0V
6.0V
5.5V
5.0V
4.5V
INPUT NEW DATA
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
1000
INPUT NEW DATA
°
T = 25 C
100
J
T = 175 C
J
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
INPUT NEW DATA
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
4.5V
°
Fig 2. Typical Output Characteristics
3.0
2.5
2.0
°
1.5
I =
D
27A
INPUT NEW DATA
10
D
I , Drain-to-Source Current (A)
V = 50V
DS
1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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