International Rectifier IRF3205S, IRF3205L Datasheet
PD - 94149
IRF3205S/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
D
S
V
DSS
R
DS(on)
ID = 110A
= 55V
= 8.0mΩ
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
2
The D
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing surface
mount package. The D2Pak is suitable for high current applications
because of its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF3205L) is available for low-profile
applications.
Pak is a surface mount power package capable of
D2Pak
IRF3205S
TO-262
IRF3205L
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 80 A
I
DM
PD @TC = 25°C Power Dissipation 200 W
V
GS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 390
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 62 A
Repetitive Avalanche Energy 20 m J
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
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Junction-to-Case ––– 0.75 °C/W
Junction-to-Ambient (PCB mounted, steady-state)* ––– 40
03/09/01
IRF3205S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 8.0 mΩ VGS = 10V, ID = 62A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 44 ––– ––– S VDS = 25V, ID = 62A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 146 ID = 62A
Gate-to-Source Charge ––– ––– 35 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 54 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = 28V
Rise Time ––– 101 ––– ID = 62A
Turn-Off Delay Time ––– 50 ––– RG = 4.5Ω
ns
Fall Time ––– 65 ––– VGS = 10V, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 3247 ––– VGS = 0V
Output Capacitance ––– 781 ––– VDS = 25V
Reverse Transfer Capacitance ––– 211 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 1050 264 mJ I
= 62A, L = 138µH
AS
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 175°C
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2 www.irf.com
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
110
390
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 62A, VGS = 0V
Reverse Recovery Time ––– 69 104 ns TJ = 25°C, IF = 62A
Reverse Recovery Charge ––– 143 215 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
= 25°C, L = 138µH
J
= 62A. (See Figure 12)
AS
≤ 62A, di/dt ≤ 207A/µs, V
DD
≤ V
(BR)DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
This is a typical value at device destruction and represents
,
operation outside rated limits.
This is a calculated value limited to T
= 175°C.
J
G
D
S
IRF3205S/L
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
T = 25 C
J
T = 175 C
J
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
2.0
°
1.5
I =
D
107A
1.0
10
D
I , Drain-to-Source Current (A)
V = 25V
DS
1
4 6 8 10 12
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature( C)
J
V =
Fig 4. Normalized On-Resistance
GS
°
10V
Vs. Temperature
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