International Rectifier IRF150 Datasheet
PD - 90337G
REPETITIVE A VALANCHE AND dv/dt RA TED IRF150
HEXFETTRANSISTORS
THRU-HOLE (TO-204AA/AE)
[REF:MIL-PRF-19500/543]
100V, N-CHANNEL
JANTX2N6764
JANTXV2N6764
Product Summary
Part Number BVDSS RDS(on) ID
IRF150 100V 0.055Ω 38A
The HEXFETtechnology is the key to International
Rectifier’s adv anced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability .
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Features:
n Repetitiv e Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
TO-3
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 38
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 24
I
DM
PD @ TC = 25°C Max. Power Dissipation 150 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 5.5
T
J
T
STG
For footnotes refer to the last page
Pulsed Drain Current ➀ 152
Linear Derating Factor 1.2 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 150 mJ
Avalanche Current ➀ 38 A
Repetitive Av alanche Energy ➀ 15 mJ
Operating Junction -55 to 150
Storage T emperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5 (typical) g
www.irf.com 1
A
V/ns
o
C
08/21/01
IRF150
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
t
BV
∆BV
R
V
g
I
DSS
I
GSS
I
GSS
Q
Q
Q
t
d(on)
t
r
t
d(off)
f
L
C
C
C
DSS
DSS
DS(on)
GS(th)
fs
g
gs
gd
S + LD
iss
oss
rss
Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA
/∆TJTemperature Coefficient of Breakdown — 0.13 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source On-State — — 0.055 VGS = 10V, ID =24A➃
Resistance — — 0.065 VGS =10V, ID =38A ➃
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID =250µA
Forward Transconductance 9.0 — — S ( ) VDS > 15V, IDS =24A➃
Zero Gate Voltage Drain Current — — 25 VDS=80V, VGS=0V
— — 250 VDS =80V
Gate-to-Source Leakage Forward — — 100 VGS =20V
Gate-to-Source Leakage Reverse — — -100 VGS =-20V
Total Gate Charge 50 — 125 VGS =10V, ID= 38A
Gate-to-Source Charge 8.0 — 22 nC VDS =50V
Gate-to-Drain (‘Miller’) Charge 25 — 65
Turn-On Delay Time — — 35 VDD =50V, ID =38A,
Rise Time — — 1 90 VGS =10V,RG =2.35Ω
Turn-Off Delay Time — — 170
Fall Time — — 130
Total Inductance — 6.1 —
Input Capacitance — 3700 VGS = 0V , VDS =25V
Output Capacitance — 1100 — pF f = 1.0MHz
Reverse Transfer Capacitance — 200 —
Ω
Ω
µA
VGS = 0V, TJ = 125°C
nA
ns
nH
Measured from the center of
drain pad to center of source
pad
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
Continuous Source Current (Body Diode) — — 38
S
I
Pulse Source Current (Body Diode) ➀ — — 152
SM
V
Diode Forward Voltage — — 1.9 V Tj = 25°C, IS =38A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 500 nS Tj = 25°C, IF = 38A, di/dt ≤100A/µs
rr
Q
Reverse Recovery Charge — — 2.9 µc VDD ≤ 30V ➃
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
A
S
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
R
thJA
For footnotes refer to the last page
2 www.irf.com
Junction to Case — — 0.83
Junction to Ambient — — 30 Typical socket mount
°C/W
+ LD.
IRF150
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com 3
Loading...