International Rectifier IRF1407 Datasheet
PD - 93907
AUTOMOTIVE MOSFET
Typical Applications
● Integrated Starter Alternator
● 42 Volts Automotive Electrical Systems
IRF1407
HEXFET® Power MOSFET
D
V
= 75V
DSS
Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
G
S
R
DS(on)
ID = 130AV
= 0.0078Ω
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
®
Power MOSFETs utilizes the lastest processing
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 130V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 92V A
I
DM
PD @TC = 25°C Power Dissipation 330 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt S 4.6 V/ns
T
J
T
STG
Pulsed Drain Current Q 520
Linear Derating Factor 2.2 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche EnergyR 390 mJ
Avalanche CurrentQ See Fig.12a, 12b, 15, 16 A
Repetitive Avalanche EnergyW mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.45
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
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IRF1407
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance U ––– 1100 ––– VGS = 0V, VDS = 0V to 60V
oss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Q Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
R Starting T
RG = 25Ω, I
S I
SD
TJ ≤ 175°C
T Pulse width ≤ 400µs; duty cycle ≤ 2%.
Drain-to-Source Breakdown Voltage 75 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.0078 Ω VGS = 10V, ID = 78A T
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
Forward Transconductance 74 ––– ––– SVDS = 25V, ID = 78A
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 60V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 75V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– 160 250 ID = 78A
Gate-to-Source Charge ––– 35 52 nC VDS = 60V
Gate-to-Drain ("Miller") Charge ––– 54 81 VGS = 10VT
Turn-On Delay Time ––– 11 ––– VDD = 38V
Rise Time ––– 150 ––– ID = 78A
Turn-Off Delay Time ––– 150 ––– RG = 2.5Ω
ns
Fall Time ––– 140 ––– VGS = 10V T
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 5600 ––– VGS = 0V
Output Capacitance ––– 890 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 190 ––– ƒ = 1.0KHz, See Fig. 5
Output Capacitance ––– 5800 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0KHz
Output Capacitance ––– 560 ––– VGS = 0V, VDS = 60V, ƒ = 1.0KHz
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) Q
––– –––
––– –––
130V
520
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 78A, VGS = 0VT
Reverse Recovery Time ––– 110 170 ns TJ = 25°C, IF = 78A
Reverse RecoveryCharge ––– 390 5 90 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
U C
eff. is a fixed capacitance that gives the same charging time
oss
= 25°C, L = 0.13mH
J
= 78A. (See Figure 12).
AS
≤ 78A, di/dt ≤ 320A/µs, V
DD
≤ V
(BR)DSS
as C
VCalculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
,
WLimited by T
oss
while V
is rising from 0 to 80% V
DS
, see Fig.12a, 12b, 15, 16 for typical repetitive
Jmax
avalanche performance.
T
DSS
D
G
S
D
G
S
.
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IRF1407
(
)
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
10
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 25°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1000.00
1000
100
10
, Drain-to-Source Current (A)
D
I
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
20µs PULSE WIDTH
Tj = 175°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
130A
I =
D
)
(Α
100.00
, Drain-to-Source Current
D
I
10.00
3.0 5.0 7.0 9.0 11.0 13.0
Fig 3. Typical Transfer Characteristics
TJ = 25°C
TJ = 175°C
V
= 15V
DS
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
C
vs. Temperature
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